The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang, Ratnasabapathy G. Iyer, Gangjian Tan, Damien J. West, Shengbai Zhang, Mercouri G Kanatzidis

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Abstract

We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

Original languageEnglish
Pages (from-to)11079-11084
Number of pages6
JournalJournal of the American Chemical Society
Volume136
Issue number31
DOIs
Publication statusPublished - Aug 6 2014

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Heterojunctions
Electrons
Semiconductors
Electronic states
Electronic structure
Energy gap
Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

The new phase [Tl4Sb6Se10][Sn 5Sb2Se14] : A naturally formed semiconducting heterostructure with two-dimensional conductance. / Fang, Lei; Iyer, Ratnasabapathy G.; Tan, Gangjian; West, Damien J.; Zhang, Shengbai; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 136, No. 31, 06.08.2014, p. 11079-11084.

Research output: Contribution to journalArticle

Fang, Lei ; Iyer, Ratnasabapathy G. ; Tan, Gangjian ; West, Damien J. ; Zhang, Shengbai ; Kanatzidis, Mercouri G. / The new phase [Tl4Sb6Se10][Sn 5Sb2Se14] : A naturally formed semiconducting heterostructure with two-dimensional conductance. In: Journal of the American Chemical Society. 2014 ; Vol. 136, No. 31. pp. 11079-11084.
@article{ad7df31d692240079547557b6989f491,
title = "The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]: A naturally formed semiconducting heterostructure with two-dimensional conductance",
abstract = "We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.",
author = "Lei Fang and Iyer, {Ratnasabapathy G.} and Gangjian Tan and West, {Damien J.} and Shengbai Zhang and Kanatzidis, {Mercouri G}",
year = "2014",
month = "8",
day = "6",
doi = "10.1021/ja505301y",
language = "English",
volume = "136",
pages = "11079--11084",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "31",

}

TY - JOUR

T1 - The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]

T2 - A naturally formed semiconducting heterostructure with two-dimensional conductance

AU - Fang, Lei

AU - Iyer, Ratnasabapathy G.

AU - Tan, Gangjian

AU - West, Damien J.

AU - Zhang, Shengbai

AU - Kanatzidis, Mercouri G

PY - 2014/8/6

Y1 - 2014/8/6

N2 - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

AB - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

UR - http://www.scopus.com/inward/record.url?scp=84905714893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905714893&partnerID=8YFLogxK

U2 - 10.1021/ja505301y

DO - 10.1021/ja505301y

M3 - Article

AN - SCOPUS:84905714893

VL - 136

SP - 11079

EP - 11084

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 31

ER -