The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang, Ratnasabapathy G. Iyer, Gangjian Tan, Damien J. West, Shengbai Zhang, Mercouri G. Kanatzidis

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

Original languageEnglish
Pages (from-to)11079-11084
Number of pages6
JournalJournal of the American Chemical Society
Volume136
Issue number31
DOIs
Publication statusPublished - Aug 6 2014

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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