The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang; Ratnasabapathy G. Iyer; Gangjian Tan; Damien J. West; Shengbai Zhang; Mercouri G. Kanatzidis

doi:10.1021/ja505301y

The new phase [Tl₄Sb₆Se₁₀][Sn ₅Sb₂Se₁₄]: A naturally formed semiconducting heterostructure with two-dimensional conductance

Lei Fang, Ratnasabapathy G. Iyer, Gangjian Tan, Damien J. West, Shengbai Zhang, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report on a new layered semiconductor Tl₈Sn ₁₀Sb₁₆Se₄₈ with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe₂-type [Sn₅Sb₂Se₁₄] and SnSe-type [Tl ₄Sb₆Se₁₀]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn ₅Sb₂Se₁₄] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl₄Sb ₆Se₁₀] layer that energetically impedes electron propagation.

Original language	English
Pages (from-to)	11079-11084
Number of pages	6
Journal	Journal of the American Chemical Society
Volume	136
Issue number	31
DOIs	https://doi.org/10.1021/ja505301y
Publication status	Published - Aug 6 2014

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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The new phase [Tl₄Sb₆Se₁₀][Sn ₅Sb₂Se₁₄] : A naturally formed semiconducting heterostructure with two-dimensional conductance. / Fang, Lei; Iyer, Ratnasabapathy G.; Tan, Gangjian; West, Damien J.; Zhang, Shengbai; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 136, No. 31, 06.08.2014, p. 11079-11084.

Research output: Contribution to journal › Article › peer-review

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abstract = "We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.",

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AU - West, Damien J.

AU - Zhang, Shengbai

AU - Kanatzidis, Mercouri G.

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AB - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.

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