Abstract
We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.
| Original language | English |
|---|---|
| Pages (from-to) | 11079-11084 |
| Number of pages | 6 |
| Journal | Journal of the American Chemical Society |
| Volume | 136 |
| Issue number | 31 |
| DOIs | |
| Publication status | Published - Aug 6 2014 |
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ASJC Scopus subject areas
- Chemistry(all)
- Catalysis
- Biochemistry
- Colloid and Surface Chemistry
Cite this
The new phase [Tl4Sb6Se10][Sn 5Sb2Se14] : A naturally formed semiconducting heterostructure with two-dimensional conductance. / Fang, Lei; Iyer, Ratnasabapathy G.; Tan, Gangjian; West, Damien J.; Zhang, Shengbai; Kanatzidis, Mercouri G.
In: Journal of the American Chemical Society, Vol. 136, No. 31, 06.08.2014, p. 11079-11084.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]
T2 - A naturally formed semiconducting heterostructure with two-dimensional conductance
AU - Fang, Lei
AU - Iyer, Ratnasabapathy G.
AU - Tan, Gangjian
AU - West, Damien J.
AU - Zhang, Shengbai
AU - Kanatzidis, Mercouri G
PY - 2014/8/6
Y1 - 2014/8/6
N2 - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.
AB - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.
UR - http://www.scopus.com/inward/record.url?scp=84905714893&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84905714893&partnerID=8YFLogxK
U2 - 10.1021/ja505301y
DO - 10.1021/ja505301y
M3 - Article
VL - 136
SP - 11079
EP - 11084
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 31
ER -