TY - JOUR
T1 - The new phase [Tl4Sb6Se10][Sn 5Sb2Se14]
T2 - A naturally formed semiconducting heterostructure with two-dimensional conductance
AU - Fang, Lei
AU - Iyer, Ratnasabapathy G.
AU - Tan, Gangjian
AU - West, Damien J.
AU - Zhang, Shengbai
AU - Kanatzidis, Mercouri G.
PY - 2014/8/6
Y1 - 2014/8/6
N2 - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.
AB - We report on a new layered semiconductor Tl8Sn 10Sb16Se48 with an indirect band gap of 0.45 eV. The novel structure is made of alternating layers of SnSe2-type [Sn5Sb2Se14] and SnSe-type [Tl 4Sb6Se10]. The material exhibits two-dimensional (2D) electron variable range hopping at low temperatures, indicating an absence of interlayer coherency of the electronic state. Theoretical calculations unveil a 2D confinement for electrons in the [Sn 5Sb2Se14] sheet and confirm the heterostructure nature. This unique electronic structure is attributed to the weak interlayer coupling and structure distortion in the electron-poor [Tl4Sb 6Se10] layer that energetically impedes electron propagation.
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U2 - 10.1021/ja505301y
DO - 10.1021/ja505301y
M3 - Article
AN - SCOPUS:84905714893
VL - 136
SP - 11079
EP - 11084
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 31
ER -