The pH Response of a Silicon-on-Insulator MOSFET with an Integrated Nanofluidic Cell

B. R. Takulapalli, T. J. Thornton, D. Gust, B. Ashcroft, S. M. Lindsay, H. Q. Zhang, N. J. Tao

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The pH response of a silicon-on-insulator (SOI) MOSFET with an integrated nanofluidic cell was studied. The surface of the MOSFET was functionalized with amino-propyl-triethoxysilane (APTES) molecules resulting in an amine terminated substrate. A 75 μm thick SU-8 photoresist was spin coated and patterned over the device surface in order to make a cell to contain the solutions.

Original languageEnglish
Pages114-116
Number of pages3
Publication statusPublished - Nov 6 2003
Event2003 IEEE International SOI Conference Proceedings - Newport Beach, CA, United States
Duration: Sep 29 2003Oct 2 2003

Other

Other2003 IEEE International SOI Conference Proceedings
CountryUnited States
CityNewport Beach, CA
Period9/29/0310/2/03

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Takulapalli, B. R., Thornton, T. J., Gust, D., Ashcroft, B., Lindsay, S. M., Zhang, H. Q., & Tao, N. J. (2003). The pH Response of a Silicon-on-Insulator MOSFET with an Integrated Nanofluidic Cell. 114-116. Paper presented at 2003 IEEE International SOI Conference Proceedings, Newport Beach, CA, United States.