Abstract
We have used medium energy ion scattering to study oxygen transport and oxidation kinetics of Al(110) at elevated temperatures in dry oxygen. Oxidation results in the formation of a stable stoichiometric Al2O3 layer with fairly abrupt interfaces. The time dependence of the film growth follows inverse logarithmic law, in agreement with the Cabrera-Mott (field-assisted) oxidation mechanism. The dependence of the growth rate on pressure is parabolic. Microscopic details on oxidation mechanism are studied by re-oxidizing a thin oxide layer with isotopically labeled oxygen. The depth profiling of oxygen traces in the oxide shows that oxygen ions are mobile species transported via migration of oxide network defects. This migration across the film is the rate-limiting step controlling oxidation.
Original language | English |
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Pages (from-to) | 199-214 |
Number of pages | 16 |
Journal | Surface Science |
Volume | 552 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - Mar 10 2004 |
Keywords
- Aluminum
- Medium energy ion scattering (MEIS)
- Oxidation
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry