The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks

S. Sayan, M. Croft, N. V. Nguyen, T. Emge, J. Ehrstein, I. Levin, J. Suehle, R. A. Bartynski, Eric Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic and dielectric properties is being rigorously examined. In our work we illustrate studies leading to such an understanding for the important materials HfO 2 and ZrO 2. Valence and conduction band densities of states for HfO 2/SiO 2/Si and ZrO 2/SiO xN y/n-Si structures were determined by soft X-ray photoemission and inverse photoemission. First principles calculations were used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges were determined by comparing the theoretical and experimental results. From this information, we are able to show that both of these dielectric materials have high enough barriers for both electron and hole transfer. We show that the crystal structure in ultrathin ZrO 2 films has considerable effects on permittivity as well as bandgap. The films reported here are predominantly amorphous below a critical thickness (∼5.4 nm) and transform to the tetragonal phase upon annealing, while thicker films appear tetragonal as grown. Finally, bandgaps obtained from combined PES and IPES studies were compared with the optical bandgap derived from ellipsometry measurements. The difference in the bandgap values found in this comparison can be attributed to the final state effects in the excitation processes of the spectroscopies involved. We discuss the interplay of the dielectric's crystal phase, defects and electronic properties, as well as the impact of this understanding on possible tailoring of the film phase for improving band-gap, band-offset and leakage. Finally, we note that lack of sufficient understanding of the dielectric's phase and electronic properties can have negative impact on the ability to correctly determine a film's EOT.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages92-101
Number of pages10
Volume788
DOIs
Publication statusPublished - Sep 9 2005
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: Mar 15 2005Mar 18 2005

Other

Other2005 International Conference on Characterization and Metrology for ULSI Technology
CountryUnited States
CityRichardson, TX
Period3/15/053/18/05

Fingerprint

dielectric properties
electronic structure
conduction bands
photoelectric emission
electronics
permittivity
valence
defects
metal oxide semiconductors
ellipsometry
thick films
electron transfer
leakage
field effect transistors
crystal structure
annealing
spectroscopy
excitation
crystals
x rays

Keywords

  • Band Offsets
  • Dielectric Band-gap
  • Hafnium dioxide (HfO )
  • High-K dielectrics
  • MOS Gate Stack
  • Photoemission
  • Zirconium Dioxide (ZrO )

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sayan, S., Croft, M., Nguyen, N. V., Emge, T., Ehrstein, J., Levin, I., ... Garfunkel, E. (2005). The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks. In AIP Conference Proceedings (Vol. 788, pp. 92-101) https://doi.org/10.1063/1.2062944

The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks. / Sayan, S.; Croft, M.; Nguyen, N. V.; Emge, T.; Ehrstein, J.; Levin, I.; Suehle, J.; Bartynski, R. A.; Garfunkel, Eric.

AIP Conference Proceedings. Vol. 788 2005. p. 92-101.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sayan, S, Croft, M, Nguyen, NV, Emge, T, Ehrstein, J, Levin, I, Suehle, J, Bartynski, RA & Garfunkel, E 2005, The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks. in AIP Conference Proceedings. vol. 788, pp. 92-101, 2005 International Conference on Characterization and Metrology for ULSI Technology, Richardson, TX, United States, 3/15/05. https://doi.org/10.1063/1.2062944
Sayan S, Croft M, Nguyen NV, Emge T, Ehrstein J, Levin I et al. The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks. In AIP Conference Proceedings. Vol. 788. 2005. p. 92-101 https://doi.org/10.1063/1.2062944
Sayan, S. ; Croft, M. ; Nguyen, N. V. ; Emge, T. ; Ehrstein, J. ; Levin, I. ; Suehle, J. ; Bartynski, R. A. ; Garfunkel, Eric. / The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks. AIP Conference Proceedings. Vol. 788 2005. pp. 92-101
@inproceedings{6a17aefa8741411688a9b342bd1f02c7,
title = "The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks",
abstract = "As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic and dielectric properties is being rigorously examined. In our work we illustrate studies leading to such an understanding for the important materials HfO 2 and ZrO 2. Valence and conduction band densities of states for HfO 2/SiO 2/Si and ZrO 2/SiO xN y/n-Si structures were determined by soft X-ray photoemission and inverse photoemission. First principles calculations were used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges were determined by comparing the theoretical and experimental results. From this information, we are able to show that both of these dielectric materials have high enough barriers for both electron and hole transfer. We show that the crystal structure in ultrathin ZrO 2 films has considerable effects on permittivity as well as bandgap. The films reported here are predominantly amorphous below a critical thickness (∼5.4 nm) and transform to the tetragonal phase upon annealing, while thicker films appear tetragonal as grown. Finally, bandgaps obtained from combined PES and IPES studies were compared with the optical bandgap derived from ellipsometry measurements. The difference in the bandgap values found in this comparison can be attributed to the final state effects in the excitation processes of the spectroscopies involved. We discuss the interplay of the dielectric's crystal phase, defects and electronic properties, as well as the impact of this understanding on possible tailoring of the film phase for improving band-gap, band-offset and leakage. Finally, we note that lack of sufficient understanding of the dielectric's phase and electronic properties can have negative impact on the ability to correctly determine a film's EOT.",
keywords = "Band Offsets, Dielectric Band-gap, Hafnium dioxide (HfO ), High-K dielectrics, MOS Gate Stack, Photoemission, Zirconium Dioxide (ZrO )",
author = "S. Sayan and M. Croft and Nguyen, {N. V.} and T. Emge and J. Ehrstein and I. Levin and J. Suehle and Bartynski, {R. A.} and Eric Garfunkel",
year = "2005",
month = "9",
day = "9",
doi = "10.1063/1.2062944",
language = "English",
isbn = "0735402779",
volume = "788",
pages = "92--101",
booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - The relation between crystalline phase, electronic structure, and dielectric properties in high-K gate stacks

AU - Sayan, S.

AU - Croft, M.

AU - Nguyen, N. V.

AU - Emge, T.

AU - Ehrstein, J.

AU - Levin, I.

AU - Suehle, J.

AU - Bartynski, R. A.

AU - Garfunkel, Eric

PY - 2005/9/9

Y1 - 2005/9/9

N2 - As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic and dielectric properties is being rigorously examined. In our work we illustrate studies leading to such an understanding for the important materials HfO 2 and ZrO 2. Valence and conduction band densities of states for HfO 2/SiO 2/Si and ZrO 2/SiO xN y/n-Si structures were determined by soft X-ray photoemission and inverse photoemission. First principles calculations were used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges were determined by comparing the theoretical and experimental results. From this information, we are able to show that both of these dielectric materials have high enough barriers for both electron and hole transfer. We show that the crystal structure in ultrathin ZrO 2 films has considerable effects on permittivity as well as bandgap. The films reported here are predominantly amorphous below a critical thickness (∼5.4 nm) and transform to the tetragonal phase upon annealing, while thicker films appear tetragonal as grown. Finally, bandgaps obtained from combined PES and IPES studies were compared with the optical bandgap derived from ellipsometry measurements. The difference in the bandgap values found in this comparison can be attributed to the final state effects in the excitation processes of the spectroscopies involved. We discuss the interplay of the dielectric's crystal phase, defects and electronic properties, as well as the impact of this understanding on possible tailoring of the film phase for improving band-gap, band-offset and leakage. Finally, we note that lack of sufficient understanding of the dielectric's phase and electronic properties can have negative impact on the ability to correctly determine a film's EOT.

AB - As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic and dielectric properties is being rigorously examined. In our work we illustrate studies leading to such an understanding for the important materials HfO 2 and ZrO 2. Valence and conduction band densities of states for HfO 2/SiO 2/Si and ZrO 2/SiO xN y/n-Si structures were determined by soft X-ray photoemission and inverse photoemission. First principles calculations were used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges were determined by comparing the theoretical and experimental results. From this information, we are able to show that both of these dielectric materials have high enough barriers for both electron and hole transfer. We show that the crystal structure in ultrathin ZrO 2 films has considerable effects on permittivity as well as bandgap. The films reported here are predominantly amorphous below a critical thickness (∼5.4 nm) and transform to the tetragonal phase upon annealing, while thicker films appear tetragonal as grown. Finally, bandgaps obtained from combined PES and IPES studies were compared with the optical bandgap derived from ellipsometry measurements. The difference in the bandgap values found in this comparison can be attributed to the final state effects in the excitation processes of the spectroscopies involved. We discuss the interplay of the dielectric's crystal phase, defects and electronic properties, as well as the impact of this understanding on possible tailoring of the film phase for improving band-gap, band-offset and leakage. Finally, we note that lack of sufficient understanding of the dielectric's phase and electronic properties can have negative impact on the ability to correctly determine a film's EOT.

KW - Band Offsets

KW - Dielectric Band-gap

KW - Hafnium dioxide (HfO )

KW - High-K dielectrics

KW - MOS Gate Stack

KW - Photoemission

KW - Zirconium Dioxide (ZrO )

UR - http://www.scopus.com/inward/record.url?scp=33749661526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749661526&partnerID=8YFLogxK

U2 - 10.1063/1.2062944

DO - 10.1063/1.2062944

M3 - Conference contribution

SN - 0735402779

SN - 9780735402775

VL - 788

SP - 92

EP - 101

BT - AIP Conference Proceedings

ER -