The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111)

J. B. Zhou, T. Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A study of the structure of thin Cu coatings on ultrathin SiO2 films grown on Si(111) is reported. Cu growth takes place in islands, and after annealing to 625 K or above, the Cu overlayer diffuses into the substrate. These results are similar to recently reported results for Ni overlayers. Unlike Ni, however, the Cu atoms occupy interstitial sites in the Si lattice.

Original languageEnglish
Pages (from-to)21-27
Number of pages7
JournalSurface Science
Volume372
Issue number1-3
Publication statusPublished - Feb 10 1997

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Ultrathin films
interstitials
Annealing
coatings
Coatings
Atoms
annealing
Substrates
atoms
Hot Temperature

Keywords

  • Copper
  • Medium energy ion scattering (MEIS)
  • Nickel
  • Silicon
  • Silicon oxides

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111). / Zhou, J. B.; Gustafsson, T.; Garfunkel, Eric.

In: Surface Science, Vol. 372, No. 1-3, 10.02.1997, p. 21-27.

Research output: Contribution to journalArticle

Zhou, J. B. ; Gustafsson, T. ; Garfunkel, Eric. / The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111). In: Surface Science. 1997 ; Vol. 372, No. 1-3. pp. 21-27.
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