The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111)

J. B. Zhou, T. Gustafsson, E. Garfunkel

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

A study of the structure of thin Cu coatings on ultrathin SiO2 films grown on Si(111) is reported. Cu growth takes place in islands, and after annealing to 625 K or above, the Cu overlayer diffuses into the substrate. These results are similar to recently reported results for Ni overlayers. Unlike Ni, however, the Cu atoms occupy interstitial sites in the Si lattice.

Original languageEnglish
Pages (from-to)21-27
Number of pages7
JournalSurface Science
Volume372
Issue number1-3
DOIs
Publication statusPublished - Feb 10 1997

    Fingerprint

Keywords

  • Copper
  • Medium energy ion scattering (MEIS)
  • Nickel
  • Silicon
  • Silicon oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this