Theoretical investigation of graphitic BeO

Alessandra Continenza, Renata M. Wentzcovitch, Arthur J Freeman

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The possibility of whether BeO, a wide-band-gap semiconductor (7.810.7 eV), may exist in the layered graphitic phaseas do the other members of the family of first-row compounds C and BNis investigated employing a first-principles total-energy local-density-approximation study of the electronic structure of this series of compounds in the layered and the dense wurtzitelike phases. We obtain the minimum-energy path between these phases in BeO and compare with those of C and BN. The chemical trends responsible for the relative metastability along the series are revealed after a detailed analysis of the differences of the energy components of the compounds in the two phases. We also offer a process for the synthesis of BeO which is based on recent progress in the synthesis of new graphitic materials by chemical vapor deposition.

Original languageEnglish
Pages (from-to)3540-3544
Number of pages5
JournalPhysical Review B
Volume41
Issue number6
DOIs
Publication statusPublished - 1990

Fingerprint

Local density approximation
Electronic structure
Chemical vapor deposition
synthesis
metastable state
energy
vapor deposition
electronic structure
broadband
trends
approximation
Wide band gap semiconductors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Theoretical investigation of graphitic BeO. / Continenza, Alessandra; Wentzcovitch, Renata M.; Freeman, Arthur J.

In: Physical Review B, Vol. 41, No. 6, 1990, p. 3540-3544.

Research output: Contribution to journalArticle

Continenza, Alessandra ; Wentzcovitch, Renata M. ; Freeman, Arthur J. / Theoretical investigation of graphitic BeO. In: Physical Review B. 1990 ; Vol. 41, No. 6. pp. 3540-3544.
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