### Abstract

We report on the observation of enhanced high field hole velocity in strained Si/Si_{1-x}Ge_{x}/Si quantum wells. This effect manifests itself in the drive current capability of nanometer scale p-channel Quantum Well Metal-Oxide-Semiconductor-Field-Effect-Transistors (p-QWMOSFET's). The high-field transport of a two-dimensional hole gas confined in a Si/Si_{1-x}Ge_{x}/Si quantum well is formulated and solved. The results indicate an increase in the hole saturated drift velocity in strained SiGe quantum wells with increasing Ge mole fractions up to x = 0.5. This is a consequence of the optical phonon spectrum of the strained SiGe alloy remaining Si-like (i.e., high energy) while the carrier transverse effective mass decreases with higher Ge content. To investigate the theoretical prediction of increased high-field drift velocity, p-QWMOSFET's were fabricated with Si/Si_{1-x}Ge_{x}/Si quantum well heterostructures grown by Molecular Beam Epitaxy (MBE) with varying Ge mole fractions, x. The fabrication sequence maintained a low thermal budget to prevent strain relaxation in the SiGe layer and involved a mixed optical/electron beam lithography scheme to define junction-isolated transistors with a minimum drawn gate lengths of 200 nm. The measured saturated transconductance, g_{msat}, of the p-QWMOSFET's were 20-50% higher than that of a reference Si p-MOSFET under equivalent biasing conditions. The importance of this g_{msat} increase for high-speed, low-power VLSI applications is discussed.

Original language | English |
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Pages (from-to) | 1965-1971 |

Number of pages | 7 |

Journal | IEEE Transactions on Electron Devices |

Volume | 43 |

Issue number | 11 |

DOIs | |

Publication status | Published - Nov 1 1996 |

### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering

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_{1-x}Ge

_{x}quantum well p-MOSFET's.

*IEEE Transactions on Electron Devices*,

*43*(11), 1965-1971. https://doi.org/10.1109/16.543034