Abstract
We have investigated the thermal and radiation chemistry of an organotin-based model photoresist to elucidate patterning mechanisms related to extreme ultraviolet (EUV) lithography. Butyltin oxide hydroxide (BuSnOOH) was dissolved in organic solvents and spin-coated to form uniform thin films. The thermal stability and radiation sensitivity of the thin films were characterized by temperature programmed desorption (TPD), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). From the TPD studies, we determined that decomposition of BuSnOOH occurs at ~653 K through cleavage of the butyl-tin bond. Low kinetic energy electron (Ekin = 80 eV) and X-ray (1486.6 eV) exposure also resulted in cleavage of the butyl-tin bond with the resulting desorption of butyl ligands from the film. From the ESD data, we estimated that the butyl ligand desorption cross section was ~4.3 × 10−14 cm2 for electrons with 80 eV kinetic energy. From the XPS results, we found a significant reduction in C 1s intensity for extended X-ray exposures, which corresponds to butyl ligand loss. There were also changes in the O 1s spectra indicating loss of hydroxyl groups and tin oxide network formation during radiation exposure. These results indicate the preferential dissociation and desorption of butyl ligands that can occur through either thermal or radiation induced processes, and that butyl ligand loss leads to the solubility contrast.
| Original language | English |
|---|---|
| Pages (from-to) | 26-31 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 205 |
| DOIs | |
| Publication status | Published - Jan 15 2019 |
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Keywords
- Electron stimulated desorption
- Extreme ultraviolet lithography
- Inorganic photoresist
- Organotin
- Temperature programmed desorption
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
Thermal and radiation chemistry of butyltin oxo hydroxo : A model inorganic photoresist. / Frederick, Ryan T.; Saha, Sumit; Trey Diulus, J.; Luo, Feixiang; Amador, Jenn M.; Li, Mengjun; Park, Deok Hie; Garfunkel, Eric; Keszler, Douglas A.; Herman, Gregory S.
In: Microelectronic Engineering, Vol. 205, 15.01.2019, p. 26-31.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermal and radiation chemistry of butyltin oxo hydroxo
T2 - A model inorganic photoresist
AU - Frederick, Ryan T.
AU - Saha, Sumit
AU - Trey Diulus, J.
AU - Luo, Feixiang
AU - Amador, Jenn M.
AU - Li, Mengjun
AU - Park, Deok Hie
AU - Garfunkel, Eric
AU - Keszler, Douglas A.
AU - Herman, Gregory S.
PY - 2019/1/15
Y1 - 2019/1/15
N2 - We have investigated the thermal and radiation chemistry of an organotin-based model photoresist to elucidate patterning mechanisms related to extreme ultraviolet (EUV) lithography. Butyltin oxide hydroxide (BuSnOOH) was dissolved in organic solvents and spin-coated to form uniform thin films. The thermal stability and radiation sensitivity of the thin films were characterized by temperature programmed desorption (TPD), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). From the TPD studies, we determined that decomposition of BuSnOOH occurs at ~653 K through cleavage of the butyl-tin bond. Low kinetic energy electron (Ekin = 80 eV) and X-ray (1486.6 eV) exposure also resulted in cleavage of the butyl-tin bond with the resulting desorption of butyl ligands from the film. From the ESD data, we estimated that the butyl ligand desorption cross section was ~4.3 × 10−14 cm2 for electrons with 80 eV kinetic energy. From the XPS results, we found a significant reduction in C 1s intensity for extended X-ray exposures, which corresponds to butyl ligand loss. There were also changes in the O 1s spectra indicating loss of hydroxyl groups and tin oxide network formation during radiation exposure. These results indicate the preferential dissociation and desorption of butyl ligands that can occur through either thermal or radiation induced processes, and that butyl ligand loss leads to the solubility contrast.
AB - We have investigated the thermal and radiation chemistry of an organotin-based model photoresist to elucidate patterning mechanisms related to extreme ultraviolet (EUV) lithography. Butyltin oxide hydroxide (BuSnOOH) was dissolved in organic solvents and spin-coated to form uniform thin films. The thermal stability and radiation sensitivity of the thin films were characterized by temperature programmed desorption (TPD), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). From the TPD studies, we determined that decomposition of BuSnOOH occurs at ~653 K through cleavage of the butyl-tin bond. Low kinetic energy electron (Ekin = 80 eV) and X-ray (1486.6 eV) exposure also resulted in cleavage of the butyl-tin bond with the resulting desorption of butyl ligands from the film. From the ESD data, we estimated that the butyl ligand desorption cross section was ~4.3 × 10−14 cm2 for electrons with 80 eV kinetic energy. From the XPS results, we found a significant reduction in C 1s intensity for extended X-ray exposures, which corresponds to butyl ligand loss. There were also changes in the O 1s spectra indicating loss of hydroxyl groups and tin oxide network formation during radiation exposure. These results indicate the preferential dissociation and desorption of butyl ligands that can occur through either thermal or radiation induced processes, and that butyl ligand loss leads to the solubility contrast.
KW - Electron stimulated desorption
KW - Extreme ultraviolet lithography
KW - Inorganic photoresist
KW - Organotin
KW - Temperature programmed desorption
KW - X-ray photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85057470546&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057470546&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2018.11.011
DO - 10.1016/j.mee.2018.11.011
M3 - Article
VL - 205
SP - 26
EP - 31
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -