Thermal and radiation chemistry of butyltin oxo hydroxo

A model inorganic photoresist

Ryan T. Frederick, Sumit Saha, J. Trey Diulus, Feixiang Luo, Jenn M. Amador, Mengjun Li, Deok Hie Park, Eric Garfunkel, Douglas A. Keszler, Gregory S. Herman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the thermal and radiation chemistry of an organotin-based model photoresist to elucidate patterning mechanisms related to extreme ultraviolet (EUV) lithography. Butyltin oxide hydroxide (BuSnOOH) was dissolved in organic solvents and spin-coated to form uniform thin films. The thermal stability and radiation sensitivity of the thin films were characterized by temperature programmed desorption (TPD), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). From the TPD studies, we determined that decomposition of BuSnOOH occurs at ~653 K through cleavage of the butyl-tin bond. Low kinetic energy electron (Ekin = 80 eV) and X-ray (1486.6 eV) exposure also resulted in cleavage of the butyl-tin bond with the resulting desorption of butyl ligands from the film. From the ESD data, we estimated that the butyl ligand desorption cross section was ~4.3 × 10−14 cm2 for electrons with 80 eV kinetic energy. From the XPS results, we found a significant reduction in C 1s intensity for extended X-ray exposures, which corresponds to butyl ligand loss. There were also changes in the O 1s spectra indicating loss of hydroxyl groups and tin oxide network formation during radiation exposure. These results indicate the preferential dissociation and desorption of butyl ligands that can occur through either thermal or radiation induced processes, and that butyl ligand loss leads to the solubility contrast.

Original languageEnglish
Pages (from-to)26-31
Number of pages6
JournalMicroelectronic Engineering
Volume205
DOIs
Publication statusPublished - Jan 15 2019

Fingerprint

Radiation chemistry
radiation chemistry
Photoresists
photoresists
Desorption
desorption
Ligands
chemistry
Tin
Electrons
ligands
Temperature programmed desorption
Kinetic energy
X ray photoelectron spectroscopy
Radiation
X rays
Extreme ultraviolet lithography
Thin films
cleavage
tin

Keywords

  • Electron stimulated desorption
  • Extreme ultraviolet lithography
  • Inorganic photoresist
  • Organotin
  • Temperature programmed desorption
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Frederick, R. T., Saha, S., Trey Diulus, J., Luo, F., Amador, J. M., Li, M., ... Herman, G. S. (2019). Thermal and radiation chemistry of butyltin oxo hydroxo: A model inorganic photoresist. Microelectronic Engineering, 205, 26-31. https://doi.org/10.1016/j.mee.2018.11.011

Thermal and radiation chemistry of butyltin oxo hydroxo : A model inorganic photoresist. / Frederick, Ryan T.; Saha, Sumit; Trey Diulus, J.; Luo, Feixiang; Amador, Jenn M.; Li, Mengjun; Park, Deok Hie; Garfunkel, Eric; Keszler, Douglas A.; Herman, Gregory S.

In: Microelectronic Engineering, Vol. 205, 15.01.2019, p. 26-31.

Research output: Contribution to journalArticle

Frederick, RT, Saha, S, Trey Diulus, J, Luo, F, Amador, JM, Li, M, Park, DH, Garfunkel, E, Keszler, DA & Herman, GS 2019, 'Thermal and radiation chemistry of butyltin oxo hydroxo: A model inorganic photoresist', Microelectronic Engineering, vol. 205, pp. 26-31. https://doi.org/10.1016/j.mee.2018.11.011
Frederick, Ryan T. ; Saha, Sumit ; Trey Diulus, J. ; Luo, Feixiang ; Amador, Jenn M. ; Li, Mengjun ; Park, Deok Hie ; Garfunkel, Eric ; Keszler, Douglas A. ; Herman, Gregory S. / Thermal and radiation chemistry of butyltin oxo hydroxo : A model inorganic photoresist. In: Microelectronic Engineering. 2019 ; Vol. 205. pp. 26-31.
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AU - Amador, Jenn M.

AU - Li, Mengjun

AU - Park, Deok Hie

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AU - Keszler, Douglas A.

AU - Herman, Gregory S.

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AB - We have investigated the thermal and radiation chemistry of an organotin-based model photoresist to elucidate patterning mechanisms related to extreme ultraviolet (EUV) lithography. Butyltin oxide hydroxide (BuSnOOH) was dissolved in organic solvents and spin-coated to form uniform thin films. The thermal stability and radiation sensitivity of the thin films were characterized by temperature programmed desorption (TPD), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). From the TPD studies, we determined that decomposition of BuSnOOH occurs at ~653 K through cleavage of the butyl-tin bond. Low kinetic energy electron (Ekin = 80 eV) and X-ray (1486.6 eV) exposure also resulted in cleavage of the butyl-tin bond with the resulting desorption of butyl ligands from the film. From the ESD data, we estimated that the butyl ligand desorption cross section was ~4.3 × 10−14 cm2 for electrons with 80 eV kinetic energy. From the XPS results, we found a significant reduction in C 1s intensity for extended X-ray exposures, which corresponds to butyl ligand loss. There were also changes in the O 1s spectra indicating loss of hydroxyl groups and tin oxide network formation during radiation exposure. These results indicate the preferential dissociation and desorption of butyl ligands that can occur through either thermal or radiation induced processes, and that butyl ligand loss leads to the solubility contrast.

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