Thermal decomposition behavior of the HfO2/SiO2/Si system

S. Sayan, Eric Garfunkel, T. Nishimura, W. H. Schulte, T. Gustafsson, G. D. Wilk

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

Original languageEnglish
Pages (from-to)928-934
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number2
DOIs
Publication statusPublished - Jul 15 2003

Fingerprint

thermal decomposition
vapor deposition
atomic force microscopy
scanning electron microscopy
oxygen
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Sayan, S., Garfunkel, E., Nishimura, T., Schulte, W. H., Gustafsson, T., & Wilk, G. D. (2003). Thermal decomposition behavior of the HfO2/SiO2/Si system. Journal of Applied Physics, 94(2), 928-934. https://doi.org/10.1063/1.1578525

Thermal decomposition behavior of the HfO2/SiO2/Si system. / Sayan, S.; Garfunkel, Eric; Nishimura, T.; Schulte, W. H.; Gustafsson, T.; Wilk, G. D.

In: Journal of Applied Physics, Vol. 94, No. 2, 15.07.2003, p. 928-934.

Research output: Contribution to journalArticle

Sayan, S, Garfunkel, E, Nishimura, T, Schulte, WH, Gustafsson, T & Wilk, GD 2003, 'Thermal decomposition behavior of the HfO2/SiO2/Si system', Journal of Applied Physics, vol. 94, no. 2, pp. 928-934. https://doi.org/10.1063/1.1578525
Sayan S, Garfunkel E, Nishimura T, Schulte WH, Gustafsson T, Wilk GD. Thermal decomposition behavior of the HfO2/SiO2/Si system. Journal of Applied Physics. 2003 Jul 15;94(2):928-934. https://doi.org/10.1063/1.1578525
Sayan, S. ; Garfunkel, Eric ; Nishimura, T. ; Schulte, W. H. ; Gustafsson, T. ; Wilk, G. D. / Thermal decomposition behavior of the HfO2/SiO2/Si system. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 2. pp. 928-934.
@article{1cdb63daaa5d415093e4dd418eb9bed7,
title = "Thermal decomposition behavior of the HfO2/SiO2/Si system",
abstract = "The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.",
author = "S. Sayan and Eric Garfunkel and T. Nishimura and Schulte, {W. H.} and T. Gustafsson and Wilk, {G. D.}",
year = "2003",
month = "7",
day = "15",
doi = "10.1063/1.1578525",
language = "English",
volume = "94",
pages = "928--934",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Thermal decomposition behavior of the HfO2/SiO2/Si system

AU - Sayan, S.

AU - Garfunkel, Eric

AU - Nishimura, T.

AU - Schulte, W. H.

AU - Gustafsson, T.

AU - Wilk, G. D.

PY - 2003/7/15

Y1 - 2003/7/15

N2 - The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

AB - The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

UR - http://www.scopus.com/inward/record.url?scp=0042267289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042267289&partnerID=8YFLogxK

U2 - 10.1063/1.1578525

DO - 10.1063/1.1578525

M3 - Article

VL - 94

SP - 928

EP - 934

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -