Thermal decomposition behavior of the HfO2/SiO2/Si system

S. Sayan, E. Garfunkel, T. Nishimura, W. H. Schulte, T. Gustafsson, G. D. Wilk

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

Original languageEnglish
Pages (from-to)928-934
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number2
DOIs
Publication statusPublished - Jul 15 2003

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sayan, S., Garfunkel, E., Nishimura, T., Schulte, W. H., Gustafsson, T., & Wilk, G. D. (2003). Thermal decomposition behavior of the HfO2/SiO2/Si system. Journal of Applied Physics, 94(2), 928-934. https://doi.org/10.1063/1.1578525