Thermal decomposition behavior of the HfO2/SiO2/Si system

S. Sayan; E. Garfunkel; T. Nishimura; W. H. Schulte; T. Gustafsson; G. D. Wilk

doi:10.1063/1.1578525

Thermal decomposition behavior of the HfO₂/SiO₂/Si system

S. Sayan, E. Garfunkel, T. Nishimura, W. H. Schulte, T. Gustafsson, G. D. Wilk

Rutgers University

Research output: Contribution to journal › Article

74 Citations (Scopus)

Abstract

The thermal decomposition behavior of HfO₂/SiO₂/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

Original language	English
Pages (from-to)	928-934
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1578525
Publication status	Published - Jul 15 2003

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Sayan, S., Garfunkel, E., Nishimura, T., Schulte, W. H., Gustafsson, T., & Wilk, G. D. (2003). Thermal decomposition behavior of the HfO₂/SiO₂/Si system. Journal of Applied Physics, 94(2), 928-934. https://doi.org/10.1063/1.1578525

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10.1063/1.1578525