Abstract
The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.
Original language | English |
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Pages (from-to) | 928-934 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jul 15 2003 |
ASJC Scopus subject areas
- Physics and Astronomy(all)