Thermal decomposition behavior of the HfO2/SiO2/Si system

S. Sayan; E. Garfunkel; T. Nishimura; W. H. Schulte; T. Gustafsson; G. D. Wilk

doi:10.1063/1.1578525

Thermal decomposition behavior of the HfO₂/SiO₂/Si system

S. Sayan, E. Garfunkel, T. Nishimura, W. H. Schulte, T. Gustafsson, G. D. Wilk

Rutgers University

Research output: Contribution to journal › Article

74 Citations (Scopus)

Abstract

The thermal decomposition behavior of HfO₂/SiO₂/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

Original language	English
Pages (from-to)	928-934
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1578525
Publication status	Published - Jul 15 2003

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Sayan, S., Garfunkel, E., Nishimura, T., Schulte, W. H., Gustafsson, T., & Wilk, G. D. (2003). Thermal decomposition behavior of the HfO₂/SiO₂/Si system. Journal of Applied Physics, 94(2), 928-934. https://doi.org/10.1063/1.1578525

@article{1cdb63daaa5d415093e4dd418eb9bed7,

title = "Thermal decomposition behavior of the HfO2/SiO2/Si system",

abstract = "The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.",

author = "S. Sayan and E. Garfunkel and T. Nishimura and Schulte, {W. H.} and T. Gustafsson and Wilk, {G. D.}",

year = "2003",

month = jul

day = "15",

doi = "10.1063/1.1578525",

language = "English",

volume = "94",

pages = "928--934",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Thermal decomposition behavior of the HfO2/SiO2/Si system

AU - Sayan, S.

AU - Garfunkel, E.

AU - Nishimura, T.

AU - Schulte, W. H.

AU - Gustafsson, T.

AU - Wilk, G. D.

PY - 2003/7/15

Y1 - 2003/7/15

N2 - The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

AB - The thermal decomposition behavior of HfO2/SiO2/Si system was investigated. The films were grown by chemical vapor deposition. X-ray phtoelectron spectroscopy, scanning electron microscopy and atomic force microscopy were used for the analysis. Oxygen diffusion in the system was also monitored.

UR - http://www.scopus.com/inward/record.url?scp=0042267289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042267289&partnerID=8YFLogxK

U2 - 10.1063/1.1578525

DO - 10.1063/1.1578525

M3 - Article

AN - SCOPUS:0042267289

VL - 94

SP - 928

EP - 934

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -

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10.1063/1.1578525