Thermal-oxidation-free dielectrics for SiC power devices

Rahul P. Ramamurthy, Dallas T. Morisette, Voshadhi Amarasinghe, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Compared with other wide bandgap materials, silicon carbide (SiC) possesses the significant advantage of an SiO2 native oxide. However, both thermally grown and deposited oxides on SiC suffer from poor interface quality, and thus both require post deposition anneals in nitric oxide (NO) to obtain usable MOS devices [1], [2]. We report an alternate approach where a passivated, disorder free oxide-SiC interface on 4H-SiC is formed without thermal oxidation. The passivated surface contains a fully saturated monolayer of nitrogen incorporated at the oxide-SiC interface. This process leads to fewer interface traps than the NO anneal process, and shows great promise for improving the channel mobility of MOSFETs.

Original languageEnglish
Title of host publication2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages242-245
Number of pages4
Volume2017-December
ISBN (Electronic)9781538631171
DOIs
Publication statusPublished - Dec 7 2017
Event5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 - Albuquerque, United States
Duration: Oct 30 2017Nov 1 2017

Other

Other5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
CountryUnited States
CityAlbuquerque
Period10/30/1711/1/17

Fingerprint

Silicon carbide
Oxides
Oxidation
Nitric oxide
Nitric Oxide
MOS devices
Monolayers
Energy gap
Nitrogen
Hot Temperature
silicon carbide

Keywords

  • Atomic Layer Deposition (ALD)
  • Interface Trap Density (Dit)
  • SiC

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ramamurthy, R. P., Morisette, D. T., Amarasinghe, V., & Feldman, L. C. (2017). Thermal-oxidation-free dielectrics for SiC power devices. In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 (Vol. 2017-December, pp. 242-245). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2017.8170554

Thermal-oxidation-free dielectrics for SiC power devices. / Ramamurthy, Rahul P.; Morisette, Dallas T.; Amarasinghe, Voshadhi; Feldman, Leonard C.

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December Institute of Electrical and Electronics Engineers Inc., 2017. p. 242-245.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ramamurthy, RP, Morisette, DT, Amarasinghe, V & Feldman, LC 2017, Thermal-oxidation-free dielectrics for SiC power devices. in 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. vol. 2017-December, Institute of Electrical and Electronics Engineers Inc., pp. 242-245, 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, Albuquerque, United States, 10/30/17. https://doi.org/10.1109/WiPDA.2017.8170554
Ramamurthy RP, Morisette DT, Amarasinghe V, Feldman LC. Thermal-oxidation-free dielectrics for SiC power devices. In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December. Institute of Electrical and Electronics Engineers Inc. 2017. p. 242-245 https://doi.org/10.1109/WiPDA.2017.8170554
Ramamurthy, Rahul P. ; Morisette, Dallas T. ; Amarasinghe, Voshadhi ; Feldman, Leonard C. / Thermal-oxidation-free dielectrics for SiC power devices. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Vol. 2017-December Institute of Electrical and Electronics Engineers Inc., 2017. pp. 242-245
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