Thermal stability of amorphous Zn-In-Sn-O films

Diana E. Proffit, Thomas Philippe, Jonathan D. Emery, Qing Ma, Bruce D. Buchholz, Peter W. Voorhees, Michael J. Bedzyk, Robert P. H. Chang, Thomas O Mason

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Isochronal annealing of amorphous Zn and Sn codoped In2O3 (a-ZITO) films was performed at the Synchrotron so that to extract, in situ, important kinetic nucleation and growth parameters from a single constant-rate heating experiment. First, amorphous Zn and Sn codoped In2O3 films were deposited via pulsed laser deposition and subjected to post-deposition annealing treatments to study their stability against crystallization. Crystallization on glass and ĉ-sapphire occurred near the same temperature, however higher codoping levels resulted in increased crystallization temperatures. Post-deposition anneal crystallization temperatures were found to be higher than the substrate temperatures required to grow crystalline films during deposition. Then, a-ZITO films were subjected to a constant temperature ramp during in situ grazing-incidence X-ray diffraction experiments. Crystallization of films on both glass and ĉ-sapphire showed similar gradual crystallization behavior between 300 and 345 °C and strong (111) texturing, which suggests the influence of surface energy minimization during crystallization. The activation energy was found to be 2.87 eV using Johnson-Mehl-Avrami analysis. This work presents the advantages of in situ experiments to study nucleation and growth during crystallization of transparent conducting oxides.

Original languageEnglish
Pages (from-to)167-174
Number of pages8
JournalJournal of Electroceramics
Volume34
Issue number2-3
DOIs
Publication statusPublished - May 13 2015

Fingerprint

Crystallization
Thermodynamic stability
thermal stability
crystallization
Aluminum Oxide
Sapphire
sapphire
Nucleation
Temperature
nucleation
Annealing
Glass
annealing
temperature
glass
Texturing
Experiments
Pulsed laser deposition
ramps
Heating rate

Keywords

  • Amorphous
  • Crystallization
  • Transparent conducting oxides
  • Zn-In-Sn-O

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Mechanics of Materials

Cite this

Proffit, D. E., Philippe, T., Emery, J. D., Ma, Q., Buchholz, B. D., Voorhees, P. W., ... Mason, T. O. (2015). Thermal stability of amorphous Zn-In-Sn-O films. Journal of Electroceramics, 34(2-3), 167-174. https://doi.org/10.1007/s10832-014-9967-4

Thermal stability of amorphous Zn-In-Sn-O films. / Proffit, Diana E.; Philippe, Thomas; Emery, Jonathan D.; Ma, Qing; Buchholz, Bruce D.; Voorhees, Peter W.; Bedzyk, Michael J.; Chang, Robert P. H.; Mason, Thomas O.

In: Journal of Electroceramics, Vol. 34, No. 2-3, 13.05.2015, p. 167-174.

Research output: Contribution to journalArticle

Proffit, DE, Philippe, T, Emery, JD, Ma, Q, Buchholz, BD, Voorhees, PW, Bedzyk, MJ, Chang, RPH & Mason, TO 2015, 'Thermal stability of amorphous Zn-In-Sn-O films', Journal of Electroceramics, vol. 34, no. 2-3, pp. 167-174. https://doi.org/10.1007/s10832-014-9967-4
Proffit DE, Philippe T, Emery JD, Ma Q, Buchholz BD, Voorhees PW et al. Thermal stability of amorphous Zn-In-Sn-O films. Journal of Electroceramics. 2015 May 13;34(2-3):167-174. https://doi.org/10.1007/s10832-014-9967-4
Proffit, Diana E. ; Philippe, Thomas ; Emery, Jonathan D. ; Ma, Qing ; Buchholz, Bruce D. ; Voorhees, Peter W. ; Bedzyk, Michael J. ; Chang, Robert P. H. ; Mason, Thomas O. / Thermal stability of amorphous Zn-In-Sn-O films. In: Journal of Electroceramics. 2015 ; Vol. 34, No. 2-3. pp. 167-174.
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