Thermally assisted flash annealing of silicon and germanium

R. L. Cohen, J. S. Williams, Leonard C Feldman, K. W. West

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The radiant energy from high-intensity xenon flash lamps can be used to anneal damage in semiconductors if the sample is moderately heated before and during the flash. The annealing takes place in air via the solid-phase epitaxy process in

Original languageEnglish
Pages (from-to)751-753
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number8
DOIs
Publication statusPublished - 1978

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xenon lamps
flash lamps
epitaxy
flash
solid phases
germanium
damage
annealing
air
silicon
radiation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thermally assisted flash annealing of silicon and germanium. / Cohen, R. L.; Williams, J. S.; Feldman, Leonard C; West, K. W.

In: Applied Physics Letters, Vol. 33, No. 8, 1978, p. 751-753.

Research output: Contribution to journalArticle

Cohen, R. L. ; Williams, J. S. ; Feldman, Leonard C ; West, K. W. / Thermally assisted flash annealing of silicon and germanium. In: Applied Physics Letters. 1978 ; Vol. 33, No. 8. pp. 751-753.
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