Thermoelectric properties and electronic structure of BaBiTe3

Duck Young Chung, Stephane Jobic, Tim Hogan, Carl R. Kannewurf, Raymond Brec, Jean Rouxel, Mercouri G. Kanatzidis

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)] `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

Original languageEnglish
Pages (from-to)15-22
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume453
Publication statusPublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chung, D. Y., Jobic, S., Hogan, T., Kannewurf, C. R., Brec, R., Rouxel, J., & Kanatzidis, M. G. (1997). Thermoelectric properties and electronic structure of BaBiTe3. Materials Research Society Symposium - Proceedings, 453, 15-22.