Thermoelectric properties and electronic structure of BaBiTe3

Duck Young Chung; Stephane Jobic; Tim Hogan; Carl R. Kannewurf; Raymond Brec; Jean Rouxel; Mercouri G. Kanatzidis

Thermoelectric properties and electronic structure of BaBiTe₃

Duck Young Chung, Stephane Jobic, Tim Hogan, Carl R. Kannewurf, Raymond Brec, Jean Rouxel, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The compound BaBiTe₃ was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K₂Te₄ or BaTe₃ flux and was recrystallized in a Ba/BaTe₃ flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P2₁2₁2₁ with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi₄Te₁₀(Te₂)]_∞ `herring-bone' shaped segments which arrange into layers with Ba²⁺ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

Original language	English
Pages (from-to)	15-22
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	453
Publication status	Published - Jan 1 1997
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Thermoelectric properties and electronic structure of BaBiTe3",

abstract = "The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.",

author = "Chung, {Duck Young} and Stephane Jobic and Tim Hogan and Kannewurf, {Carl R.} and Raymond Brec and Jean Rouxel and Kanatzidis, {Mercouri G.}",

year = "1997",

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day = "1",

language = "English",

volume = "453",

pages = "15--22",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 05-12-1996",

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TY - JOUR

T1 - Thermoelectric properties and electronic structure of BaBiTe3

AU - Chung, Duck Young

AU - Jobic, Stephane

AU - Hogan, Tim

AU - Kannewurf, Carl R.

AU - Brec, Raymond

AU - Rouxel, Jean

AU - Kanatzidis, Mercouri G.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

AB - The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

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T2 - Proceedings of the 1996 MRS Fall Symposium

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