Abstract
The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 15-22 |
| Number of pages | 8 |
| Volume | 453 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996 |
Other
| Other | Proceedings of the 1996 MRS Fall Symposium |
|---|---|
| City | Boston, MA, USA |
| Period | 12/2/96 → 12/5/96 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Thermoelectric properties and electronic structure of BaBiTe3. / Chung, Duck Young; Jobic, Stephane; Hogan, Tim; Kannewurf, Carl R.; Brec, Raymond; Rouxel, Jean; Kanatzidis, Mercouri G.
Materials Research Society Symposium - Proceedings. Vol. 453 Materials Research Society, 1997. p. 15-22.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Thermoelectric properties and electronic structure of BaBiTe3
AU - Chung, Duck Young
AU - Jobic, Stephane
AU - Hogan, Tim
AU - Kannewurf, Carl R.
AU - Brec, Raymond
AU - Rouxel, Jean
AU - Kanatzidis, Mercouri G
PY - 1997
Y1 - 1997
N2 - The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.
AB - The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=0030645080&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030645080&partnerID=8YFLogxK
M3 - Conference contribution
VL - 453
SP - 15
EP - 22
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -