Abstract
The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2Te4 or BaTe3 flux and was recrystallized in a Ba/BaTe3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a = 4.6077(2) angstroms, b = 17.0437(8) angstroms, c = 18.2997(8) angstroms. Its structure is made of interdigitating columnar anionic [Bi4Te10(Te2)]∞ `herring-bone' shaped segments which arrange into layers with Ba2+ ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.
Original language | English |
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Pages (from-to) | 15-22 |
Number of pages | 8 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 453 |
Publication status | Published - Jan 1 1997 |
Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering