Thermoelectric properties of half-Heusler phases

ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn

S. Sportouch, M. A. Rocci-Lane, J. Ireland, P. Brazis, C. R. Kannewurf, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Our previous investigations on the half-Heusler phases, rare earth nickel antimonides and zirconium nickel stannides, have indicated that ErNiSb can be comparably promising to ZrNiSn for further thermoelectric investigations. These compounds crystallize in the cubic MgAgAs structure type and possess Seebeck coefficients up to +160 μV/K and -355 μV/K, respectively. Their thermal conductivities are approximately 60 mW/cm.K with their electrical conductivity curves resembling a semiconductor (350 S/cm and 250 S/cm for ErNiSb and ZrNiSn, respectively). The rare earth nickel antimonide compounds are synthesized as p-type materials, however, a careful analysis of their electronic band structures point out that n-type materials will possess larger effective masses and therefore larger Seebeck coefficients. Consequently, in order to improve the transport properties of these compounds and to achieve n-type materials, we investigated some of their solid solutions obtained by partial substitution of the transition metal element. Here, we report the transport properties of a wide range of solid solution members corresponding to the formula ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn (x+y+z = 1).

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
PublisherIEEE
Pages344-347
Number of pages4
Publication statusPublished - 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

Other

Other18th International Conference on Thermoelectrics (ICT'99)
CityBaltimore, MD, USA
Period8/29/999/2/99

Fingerprint

Seebeck coefficient
Transport properties
Rare earths
Solid solutions
Nickel compounds
Nickel
Zirconium
Chemical elements
Band structure
Transition metals
Thermal conductivity
Substitution reactions
Semiconductor materials
Electric Conductivity

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sportouch, S., Rocci-Lane, M. A., Ireland, J., Brazis, P., Kannewurf, C. R., & Kanatzidis, M. G. (1999). Thermoelectric properties of half-Heusler phases: ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn. In International Conference on Thermoelectrics, ICT, Proceedings (pp. 344-347). IEEE.

Thermoelectric properties of half-Heusler phases : ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn. / Sportouch, S.; Rocci-Lane, M. A.; Ireland, J.; Brazis, P.; Kannewurf, C. R.; Kanatzidis, Mercouri G.

International Conference on Thermoelectrics, ICT, Proceedings. IEEE, 1999. p. 344-347.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sportouch, S, Rocci-Lane, MA, Ireland, J, Brazis, P, Kannewurf, CR & Kanatzidis, MG 1999, Thermoelectric properties of half-Heusler phases: ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn. in International Conference on Thermoelectrics, ICT, Proceedings. IEEE, pp. 344-347, 18th International Conference on Thermoelectrics (ICT'99), Baltimore, MD, USA, 8/29/99.
Sportouch S, Rocci-Lane MA, Ireland J, Brazis P, Kannewurf CR, Kanatzidis MG. Thermoelectric properties of half-Heusler phases: ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn. In International Conference on Thermoelectrics, ICT, Proceedings. IEEE. 1999. p. 344-347
Sportouch, S. ; Rocci-Lane, M. A. ; Ireland, J. ; Brazis, P. ; Kannewurf, C. R. ; Kanatzidis, Mercouri G. / Thermoelectric properties of half-Heusler phases : ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn. International Conference on Thermoelectrics, ICT, Proceedings. IEEE, 1999. pp. 344-347
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abstract = "Our previous investigations on the half-Heusler phases, rare earth nickel antimonides and zirconium nickel stannides, have indicated that ErNiSb can be comparably promising to ZrNiSn for further thermoelectric investigations. These compounds crystallize in the cubic MgAgAs structure type and possess Seebeck coefficients up to +160 μV/K and -355 μV/K, respectively. Their thermal conductivities are approximately 60 mW/cm.K with their electrical conductivity curves resembling a semiconductor (350 S/cm and 250 S/cm for ErNiSb and ZrNiSn, respectively). The rare earth nickel antimonide compounds are synthesized as p-type materials, however, a careful analysis of their electronic band structures point out that n-type materials will possess larger effective masses and therefore larger Seebeck coefficients. Consequently, in order to improve the transport properties of these compounds and to achieve n-type materials, we investigated some of their solid solutions obtained by partial substitution of the transition metal element. Here, we report the transport properties of a wide range of solid solution members corresponding to the formula ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn (x+y+z = 1).",
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AU - Ireland, J.

AU - Brazis, P.

AU - Kannewurf, C. R.

AU - Kanatzidis, Mercouri G

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N2 - Our previous investigations on the half-Heusler phases, rare earth nickel antimonides and zirconium nickel stannides, have indicated that ErNiSb can be comparably promising to ZrNiSn for further thermoelectric investigations. These compounds crystallize in the cubic MgAgAs structure type and possess Seebeck coefficients up to +160 μV/K and -355 μV/K, respectively. Their thermal conductivities are approximately 60 mW/cm.K with their electrical conductivity curves resembling a semiconductor (350 S/cm and 250 S/cm for ErNiSb and ZrNiSn, respectively). The rare earth nickel antimonide compounds are synthesized as p-type materials, however, a careful analysis of their electronic band structures point out that n-type materials will possess larger effective masses and therefore larger Seebeck coefficients. Consequently, in order to improve the transport properties of these compounds and to achieve n-type materials, we investigated some of their solid solutions obtained by partial substitution of the transition metal element. Here, we report the transport properties of a wide range of solid solution members corresponding to the formula ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn (x+y+z = 1).

AB - Our previous investigations on the half-Heusler phases, rare earth nickel antimonides and zirconium nickel stannides, have indicated that ErNiSb can be comparably promising to ZrNiSn for further thermoelectric investigations. These compounds crystallize in the cubic MgAgAs structure type and possess Seebeck coefficients up to +160 μV/K and -355 μV/K, respectively. Their thermal conductivities are approximately 60 mW/cm.K with their electrical conductivity curves resembling a semiconductor (350 S/cm and 250 S/cm for ErNiSb and ZrNiSn, respectively). The rare earth nickel antimonide compounds are synthesized as p-type materials, however, a careful analysis of their electronic band structures point out that n-type materials will possess larger effective masses and therefore larger Seebeck coefficients. Consequently, in order to improve the transport properties of these compounds and to achieve n-type materials, we investigated some of their solid solutions obtained by partial substitution of the transition metal element. Here, we report the transport properties of a wide range of solid solution members corresponding to the formula ErNi1-xCuxSb, YNi1-xCuxSb and ZrxHfyTizNiSn (x+y+z = 1).

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