Thermoelectric properties of the cubic AgPb10SbTe12

Kuei Fang Hsu, Sim Loo, Wet Chen, Ctirad Uher, Tim Hogan, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsG.S. Nolas, J. Yang, T.P. Hogan, D.C. Johnson
Pages155-160
Number of pages6
Volume793
Publication statusPublished - 2003
EventThermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
Duration: Dec 1 2003Dec 3 2003

Other

OtherThermoelectric Materials 2003 - Research and Applications
CountryUnited States
CityBoston, MA.
Period12/1/0312/3/03

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hsu, K. F., Loo, S., Chen, W., Uher, C., Hogan, T., & Kanatzidis, M. G. (2003). Thermoelectric properties of the cubic AgPb10SbTe12. In G. S. Nolas, J. Yang, T. P. Hogan, & D. C. Johnson (Eds.), Materials Research Society Symposium - Proceedings (Vol. 793, pp. 155-160)