Thermoelectrics with earth abundant elements

Low thermal conductivity and high thermopower in doped SnS

Qing Tan, Li Dong Zhao, Jing Feng Li, Chao Feng Wu, Tian Ran Wei, Zhi Bo Xing, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

127 Citations (Scopus)

Abstract

The thermoelectric properties of Ag-doped SnS samples synthesized by mechanical alloying followed by spark plasma sintering were studied. We report that SnS possesses a high Seebeck coefficient of >+400 μV K-1 and Ag doping increases the carrier concentration by more than four orders of magnitude giving significantly improving electrical conductivity. The thermal conductivity falls below 0.5 W m-1 K-1 at 873 K and leads to a high ZT of 0.6. The data indicate that earth-abundant and environmentally friendly SnS is a promising candidate for thermoelectric applications despite its relatively wide bandgap of 1.2 eV.

Original languageEnglish
Pages (from-to)17302-17306
Number of pages5
JournalJournal of Materials Chemistry A
Volume2
Issue number41
DOIs
Publication statusPublished - Nov 7 2014

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Spark plasma sintering
Seebeck coefficient
Thermoelectric power
Mechanical alloying
Carrier concentration
Thermal conductivity
Energy gap
Earth (planet)
Doping (additives)
Electric Conductivity

ASJC Scopus subject areas

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Thermoelectrics with earth abundant elements : Low thermal conductivity and high thermopower in doped SnS. / Tan, Qing; Zhao, Li Dong; Li, Jing Feng; Wu, Chao Feng; Wei, Tian Ran; Xing, Zhi Bo; Kanatzidis, Mercouri G.

In: Journal of Materials Chemistry A, Vol. 2, No. 41, 07.11.2014, p. 17302-17306.

Research output: Contribution to journalArticle

Tan, Qing ; Zhao, Li Dong ; Li, Jing Feng ; Wu, Chao Feng ; Wei, Tian Ran ; Xing, Zhi Bo ; Kanatzidis, Mercouri G. / Thermoelectrics with earth abundant elements : Low thermal conductivity and high thermopower in doped SnS. In: Journal of Materials Chemistry A. 2014 ; Vol. 2, No. 41. pp. 17302-17306.
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