Thermoelectrics with earth abundant elements: Low thermal conductivity and high thermopower in doped SnS

Qing Tan, Li Dong Zhao, Jing Feng Li, Chao Feng Wu, Tian Ran Wei, Zhi Bo Xing, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

127 Citations (Scopus)

Abstract

The thermoelectric properties of Ag-doped SnS samples synthesized by mechanical alloying followed by spark plasma sintering were studied. We report that SnS possesses a high Seebeck coefficient of >+400 μV K-1 and Ag doping increases the carrier concentration by more than four orders of magnitude giving significantly improving electrical conductivity. The thermal conductivity falls below 0.5 W m-1 K-1 at 873 K and leads to a high ZT of 0.6. The data indicate that earth-abundant and environmentally friendly SnS is a promising candidate for thermoelectric applications despite its relatively wide bandgap of 1.2 eV.

Original languageEnglish
Pages (from-to)17302-17306
Number of pages5
JournalJournal of Materials Chemistry A
Volume2
Issue number41
DOIs
Publication statusPublished - Nov 7 2014

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Spark plasma sintering
Seebeck coefficient
Thermoelectric power
Mechanical alloying
Carrier concentration
Thermal conductivity
Energy gap
Earth (planet)
Doping (additives)
Electric Conductivity

ASJC Scopus subject areas

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Thermoelectrics with earth abundant elements : Low thermal conductivity and high thermopower in doped SnS. / Tan, Qing; Zhao, Li Dong; Li, Jing Feng; Wu, Chao Feng; Wei, Tian Ran; Xing, Zhi Bo; Kanatzidis, Mercouri G.

In: Journal of Materials Chemistry A, Vol. 2, No. 41, 07.11.2014, p. 17302-17306.

Research output: Contribution to journalArticle

Tan, Qing ; Zhao, Li Dong ; Li, Jing Feng ; Wu, Chao Feng ; Wei, Tian Ran ; Xing, Zhi Bo ; Kanatzidis, Mercouri G. / Thermoelectrics with earth abundant elements : Low thermal conductivity and high thermopower in doped SnS. In: Journal of Materials Chemistry A. 2014 ; Vol. 2, No. 41. pp. 17302-17306.
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