Thin films of n-Si/poly-(CH3)3Si-cyclooctatetraene: Conducting-polymer solar cells and layered structures

Michael J. Sailor, Eric J. Ginsburg, Christopher B. Gorman, Amit Kumar, Robert H. Grubbs, Nathan S Lewis

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Abstract

The optical and electronic properties of thin films of the solution-processible polymer poly-(CH3)3Si-cyclooctatetraene are presented. This conjugated polymer is based on a polyacetylene backbone with (CH3)3Si side groups. Thin transparent films have been cast onto n-doped silicon (n-Si) substrates and doped with iodine to form surface-barrier solar cells. The devices produce photovoltages that are at the theoretical limit and that are much greater than can be obtained from n-Si contacts with conventional metals. Two methods for forming layered polymeric materials, one involving the spincoating of preformed polymers and the other comprising the sequential polymerization of different monomers, are also described. An organic polymer analog of a metal/insulator/metal capacitor has been constructed with the latter method.

Original languageEnglish
Pages (from-to)1146-1149
Number of pages4
JournalScience
Volume249
Issue number4973
Publication statusPublished - Sep 7 1990

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Cite this

Sailor, M. J., Ginsburg, E. J., Gorman, C. B., Kumar, A., Grubbs, R. H., & Lewis, N. S. (1990). Thin films of n-Si/poly-(CH3)3Si-cyclooctatetraene: Conducting-polymer solar cells and layered structures. Science, 249(4973), 1146-1149.