Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices

Samantha S. Wilson, Chengxiang Xiang, Yulia Tolstova, Nathan S Lewis, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Cu2O is a promising, earth-abundant alternative to traditional photovoltaic materials (CIGS, CdTe, etc.) because of its low cost, high availability, and straightforward processing. We report a method to fabricate Cu2O substrates with thicknesses of less than 20 microns which may be handled and processed into devices. Development of thinner Cu2O substrates is essential as extrinsic doping has been impossible thus far, and intrinsic Cu2O is highly resistive. Hall measurements indicate that the substrates had Hall mobilities of 10-20 cm2V-1s -1 and carrier concentrations on the order of 1014 cm 3. Current-voltage characteristics of these Cu2O substrates were derived from liquid junction Schottky barrier device measurements which indicate open circuit voltages of Voc 600 mV.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages3191-3194
Number of pages4
DOIs
Publication statusPublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Oxidation
Substrates
Hall mobility
Open circuit voltage
Current voltage characteristics
Carrier concentration
Earth (planet)
Doping (additives)
Availability
Hot Temperature
Liquids
Processing
Costs

Keywords

  • copper compounds
  • materials handling
  • oxygen
  • photovoltaic cells and semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Wilson, S. S., Xiang, C., Tolstova, Y., Lewis, N. S., & Atwater, H. A. (2012). Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3191-3194). [6318256] https://doi.org/10.1109/PVSC.2012.6318256

Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices. / Wilson, Samantha S.; Xiang, Chengxiang; Tolstova, Yulia; Lewis, Nathan S; Atwater, Harry A.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 3191-3194 6318256.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wilson, SS, Xiang, C, Tolstova, Y, Lewis, NS & Atwater, HA 2012, Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6318256, pp. 3191-3194, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6318256
Wilson SS, Xiang C, Tolstova Y, Lewis NS, Atwater HA. Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 3191-3194. 6318256 https://doi.org/10.1109/PVSC.2012.6318256
Wilson, Samantha S. ; Xiang, Chengxiang ; Tolstova, Yulia ; Lewis, Nathan S ; Atwater, Harry A. / Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 3191-3194
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