Thin PSG process for 4H-SiC MOSFET

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, A. Modic, Y. Xu, Eric Garfunkel, M. R. Jennings, C. Fisher, S. M. Thomas, P. Mawby, S. Dhar, Leonard C Feldman, J. R. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages513-516
Number of pages4
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: Sep 29 2013Oct 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

Fingerprint

phosphorus pentoxide
Passivation
passivity
field effect transistors
Glass
glass
Nitric oxide
nitric oxide
Nitric Oxide
causes
Temperature

Keywords

  • Bias-temperature stress
  • Channel mobility
  • Interface traps
  • Phosphosilicate glass
  • Threshold voltage stability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Sharma, Y. K., Ahyi, A. C., Issacs-Smith, T., Modic, A., Xu, Y., Garfunkel, E., ... Williams, J. R. (2014). Thin PSG process for 4H-SiC MOSFET. In Materials Science Forum (Vol. 778-780, pp. 513-516). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.513

Thin PSG process for 4H-SiC MOSFET. / Sharma, Y. K.; Ahyi, A. C.; Issacs-Smith, T.; Modic, A.; Xu, Y.; Garfunkel, Eric; Jennings, M. R.; Fisher, C.; Thomas, S. M.; Mawby, P.; Dhar, S.; Feldman, Leonard C; Williams, J. R.

Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. p. 513-516 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sharma, YK, Ahyi, AC, Issacs-Smith, T, Modic, A, Xu, Y, Garfunkel, E, Jennings, MR, Fisher, C, Thomas, SM, Mawby, P, Dhar, S, Feldman, LC & Williams, JR 2014, Thin PSG process for 4H-SiC MOSFET. in Materials Science Forum. vol. 778-780, Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 513-516, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 9/29/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.513
Sharma YK, Ahyi AC, Issacs-Smith T, Modic A, Xu Y, Garfunkel E et al. Thin PSG process for 4H-SiC MOSFET. In Materials Science Forum. Vol. 778-780. Trans Tech Publications Ltd. 2014. p. 513-516. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.513
Sharma, Y. K. ; Ahyi, A. C. ; Issacs-Smith, T. ; Modic, A. ; Xu, Y. ; Garfunkel, Eric ; Jennings, M. R. ; Fisher, C. ; Thomas, S. M. ; Mawby, P. ; Dhar, S. ; Feldman, Leonard C ; Williams, J. R. / Thin PSG process for 4H-SiC MOSFET. Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. pp. 513-516 (Materials Science Forum).
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AU - Garfunkel, Eric

AU - Jennings, M. R.

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