Ti-Ti bonding in γ-TiAl and F.C.C. Ti

Y. Song, S. P. Tang, J. H. Xu, O. N. Mryasov, Arthur J Freeman, C. Woodward, D. M. Dimiduk

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The flow and fracture of high-temperature intermetallic alloys is strongly influenced by the propagation and cross-slip of ordinary and super dislocations. One factor associated with the poor ductility of TiAl is an apparently large Peierls stress, or lattice friction stress for the glide of ordinary (½〈110〉) dislocations. This Peierls relief is intimately related to the underlying crystal and electronic structure of TiAl, and specific bonding states have been identified by some investigators as contributing to the pinning of dislocations along certain line directions. In this study we quantify the relative strength of these bonds using several complementary electronic structure methods. Aspects of the electronic structure, equilibrium lattice constants and bond energies of γ-TiAl are compared with hypothetical f.c.c. Ti as obtained by the full-potential linearized augmented-plane-wave (FLAPW) method, the DMol molecular cluster method and the linear muffin-tin orbital (LMTO) Green function (GF) method. Pair energies, bond occupations of Ti-Ti and Ti-Al bonds in L10 TiAl and f.c.c. Ti are calculated using the LMTOGF method. Comparing the dxy bonding states for these two crystal structure, we find the in-plane directional d-d bonding between Ti atoms on the (001) plane are strengthened in TiAl relative to f.c.c. Ti. These observations suggest that the alternating (001) planes of Al and Ti atoms presented in TiAl enhance these bonding states. Conversely, transition-metal ternary additions substituted on the Al sites in TiAl are expected to weaken these bonding states. Using the FLAPW method, we examine the changes in charge density in the Ti(001) planes when Mn atoms are substituted on Al sites in TiAl. Finally, LMTOGF methods are used to study the effect of Mn substitutional point defects on the Ti(001) dxy bonding states.

Original languageEnglish
Pages (from-to)987-1002
Number of pages16
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume70
Issue number4
DOIs
Publication statusPublished - 1994

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Electronic structure
electronic structure
Atoms
plane waves
Crystal structure
atoms
crystal structure
molecular clusters
Tin
Point defects
Charge density
ductility
Green's function
occupation
point defects
Lattice constants
Intermetallics
Transition metals
intermetallics
Ductility

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Chemical Engineering(all)

Cite this

Ti-Ti bonding in γ-TiAl and F.C.C. Ti. / Song, Y.; Tang, S. P.; Xu, J. H.; Mryasov, O. N.; Freeman, Arthur J; Woodward, C.; Dimiduk, D. M.

In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol. 70, No. 4, 1994, p. 987-1002.

Research output: Contribution to journalArticle

Song, Y. ; Tang, S. P. ; Xu, J. H. ; Mryasov, O. N. ; Freeman, Arthur J ; Woodward, C. ; Dimiduk, D. M. / Ti-Ti bonding in γ-TiAl and F.C.C. Ti. In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 1994 ; Vol. 70, No. 4. pp. 987-1002.
@article{41de4692cbb546b38b9257b999e0401f,
title = "Ti-Ti bonding in γ-TiAl and F.C.C. Ti",
abstract = "The flow and fracture of high-temperature intermetallic alloys is strongly influenced by the propagation and cross-slip of ordinary and super dislocations. One factor associated with the poor ductility of TiAl is an apparently large Peierls stress, or lattice friction stress for the glide of ordinary (½〈110〉) dislocations. This Peierls relief is intimately related to the underlying crystal and electronic structure of TiAl, and specific bonding states have been identified by some investigators as contributing to the pinning of dislocations along certain line directions. In this study we quantify the relative strength of these bonds using several complementary electronic structure methods. Aspects of the electronic structure, equilibrium lattice constants and bond energies of γ-TiAl are compared with hypothetical f.c.c. Ti as obtained by the full-potential linearized augmented-plane-wave (FLAPW) method, the DMol molecular cluster method and the linear muffin-tin orbital (LMTO) Green function (GF) method. Pair energies, bond occupations of Ti-Ti and Ti-Al bonds in L10 TiAl and f.c.c. Ti are calculated using the LMTOGF method. Comparing the dxy bonding states for these two crystal structure, we find the in-plane directional d-d bonding between Ti atoms on the (001) plane are strengthened in TiAl relative to f.c.c. Ti. These observations suggest that the alternating (001) planes of Al and Ti atoms presented in TiAl enhance these bonding states. Conversely, transition-metal ternary additions substituted on the Al sites in TiAl are expected to weaken these bonding states. Using the FLAPW method, we examine the changes in charge density in the Ti(001) planes when Mn atoms are substituted on Al sites in TiAl. Finally, LMTOGF methods are used to study the effect of Mn substitutional point defects on the Ti(001) dxy bonding states.",
author = "Y. Song and Tang, {S. P.} and Xu, {J. H.} and Mryasov, {O. N.} and Freeman, {Arthur J} and C. Woodward and Dimiduk, {D. M.}",
year = "1994",
doi = "10.1080/01418639408240267",
language = "English",
volume = "70",
pages = "987--1002",
journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",
issn = "1364-2812",
publisher = "Taylor and Francis Ltd.",
number = "4",

}

TY - JOUR

T1 - Ti-Ti bonding in γ-TiAl and F.C.C. Ti

AU - Song, Y.

AU - Tang, S. P.

AU - Xu, J. H.

AU - Mryasov, O. N.

AU - Freeman, Arthur J

AU - Woodward, C.

AU - Dimiduk, D. M.

PY - 1994

Y1 - 1994

N2 - The flow and fracture of high-temperature intermetallic alloys is strongly influenced by the propagation and cross-slip of ordinary and super dislocations. One factor associated with the poor ductility of TiAl is an apparently large Peierls stress, or lattice friction stress for the glide of ordinary (½〈110〉) dislocations. This Peierls relief is intimately related to the underlying crystal and electronic structure of TiAl, and specific bonding states have been identified by some investigators as contributing to the pinning of dislocations along certain line directions. In this study we quantify the relative strength of these bonds using several complementary electronic structure methods. Aspects of the electronic structure, equilibrium lattice constants and bond energies of γ-TiAl are compared with hypothetical f.c.c. Ti as obtained by the full-potential linearized augmented-plane-wave (FLAPW) method, the DMol molecular cluster method and the linear muffin-tin orbital (LMTO) Green function (GF) method. Pair energies, bond occupations of Ti-Ti and Ti-Al bonds in L10 TiAl and f.c.c. Ti are calculated using the LMTOGF method. Comparing the dxy bonding states for these two crystal structure, we find the in-plane directional d-d bonding between Ti atoms on the (001) plane are strengthened in TiAl relative to f.c.c. Ti. These observations suggest that the alternating (001) planes of Al and Ti atoms presented in TiAl enhance these bonding states. Conversely, transition-metal ternary additions substituted on the Al sites in TiAl are expected to weaken these bonding states. Using the FLAPW method, we examine the changes in charge density in the Ti(001) planes when Mn atoms are substituted on Al sites in TiAl. Finally, LMTOGF methods are used to study the effect of Mn substitutional point defects on the Ti(001) dxy bonding states.

AB - The flow and fracture of high-temperature intermetallic alloys is strongly influenced by the propagation and cross-slip of ordinary and super dislocations. One factor associated with the poor ductility of TiAl is an apparently large Peierls stress, or lattice friction stress for the glide of ordinary (½〈110〉) dislocations. This Peierls relief is intimately related to the underlying crystal and electronic structure of TiAl, and specific bonding states have been identified by some investigators as contributing to the pinning of dislocations along certain line directions. In this study we quantify the relative strength of these bonds using several complementary electronic structure methods. Aspects of the electronic structure, equilibrium lattice constants and bond energies of γ-TiAl are compared with hypothetical f.c.c. Ti as obtained by the full-potential linearized augmented-plane-wave (FLAPW) method, the DMol molecular cluster method and the linear muffin-tin orbital (LMTO) Green function (GF) method. Pair energies, bond occupations of Ti-Ti and Ti-Al bonds in L10 TiAl and f.c.c. Ti are calculated using the LMTOGF method. Comparing the dxy bonding states for these two crystal structure, we find the in-plane directional d-d bonding between Ti atoms on the (001) plane are strengthened in TiAl relative to f.c.c. Ti. These observations suggest that the alternating (001) planes of Al and Ti atoms presented in TiAl enhance these bonding states. Conversely, transition-metal ternary additions substituted on the Al sites in TiAl are expected to weaken these bonding states. Using the FLAPW method, we examine the changes in charge density in the Ti(001) planes when Mn atoms are substituted on Al sites in TiAl. Finally, LMTOGF methods are used to study the effect of Mn substitutional point defects on the Ti(001) dxy bonding states.

UR - http://www.scopus.com/inward/record.url?scp=0000761809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000761809&partnerID=8YFLogxK

U2 - 10.1080/01418639408240267

DO - 10.1080/01418639408240267

M3 - Article

AN - SCOPUS:0000761809

VL - 70

SP - 987

EP - 1002

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

SN - 1364-2812

IS - 4

ER -