Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).

Original languageEnglish
Article number295704
JournalNanotechnology
Volume19
Issue number29
DOIs
Publication statusPublished - Jul 23 2008

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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