Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

J. Tatebayashi; B. L. Liang; R. B. Laghumavarapu; D. A. Bussian; H. Htoon; V. Klimov; G. Balakrishnan; L. R. Dawson; D. L. Huffaker

doi:10.1088/0957-4484/19/29/295704

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).

Original language	English
Article number	295704
Journal	Nanotechnology
Volume	19
Issue number	29
DOIs	https://doi.org/10.1088/0957-4484/19/29/295704
Publication status	Published - Jul 23 2008

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/19/29/295704

Fingerprint Dive into the research topics of 'Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well'. Together they form a unique fingerprint.

Cite this

Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well. / Tatebayashi, J.; Liang, B. L.; Laghumavarapu, R. B.; Bussian, D. A.; Htoon, H.; Klimov, V.; Balakrishnan, G.; Dawson, L. R.; Huffaker, D. L.

In: Nanotechnology, Vol. 19, No. 29, 295704, 23.07.2008.

Research output: Contribution to journal › Article › peer-review

@article{364afe5819b94e38ac0f1a466b46ce93,

title = "Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well",

abstract = "Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).",

author = "J. Tatebayashi and Liang, {B. L.} and Laghumavarapu, {R. B.} and Bussian, {D. A.} and H. Htoon and V. Klimov and G. Balakrishnan and Dawson, {L. R.} and Huffaker, {D. L.}",

year = "2008",

month = jul,

day = "23",

doi = "10.1088/0957-4484/19/29/295704",

language = "English",

volume = "19",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "29",

}

TY - JOUR

T1 - Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

AU - Tatebayashi, J.

AU - Liang, B. L.

AU - Laghumavarapu, R. B.

AU - Bussian, D. A.

AU - Htoon, H.

AU - Klimov, V.

AU - Balakrishnan, G.

AU - Dawson, L. R.

AU - Huffaker, D. L.

PY - 2008/7/23

Y1 - 2008/7/23

N2 - Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).

AB - Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).

UR - http://www.scopus.com/inward/record.url?scp=47249108029&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249108029&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/19/29/295704

DO - 10.1088/0957-4484/19/29/295704

M3 - Article

C2 - 21730609

AN - SCOPUS:47249108029

VL - 19

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 29

M1 - 295704

ER -