Abstract
Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).
| Original language | English |
|---|---|
| Article number | 295704 |
| Journal | Nanotechnology |
| Volume | 19 |
| Issue number | 29 |
| DOIs | |
| Publication status | Published - Jul 23 2008 |
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ASJC Scopus subject areas
- Materials Science(all)
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
Cite this
Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well. / Tatebayashi, J.; Liang, B. L.; Laghumavarapu, R. B.; Bussian, D. A.; Htoon, H.; Klimov, Victor I; Balakrishnan, G.; Dawson, L. R.; Huffaker, D. L.
In: Nanotechnology, Vol. 19, No. 29, 295704, 23.07.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well
AU - Tatebayashi, J.
AU - Liang, B. L.
AU - Laghumavarapu, R. B.
AU - Bussian, D. A.
AU - Htoon, H.
AU - Klimov, Victor I
AU - Balakrishnan, G.
AU - Dawson, L. R.
AU - Huffaker, D. L.
PY - 2008/7/23
Y1 - 2008/7/23
N2 - Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).
AB - Optical properties and carrier dynamics in type-II Ga(As)Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW) are reported. A large blueshift of the photoluminescence (PL) peak is observed with increased excitation densities. This blueshift is due to the Coulomb interaction between physically separated electrons and holes characteristic of the type-II band alignment, along with a band-filling effect of electrons in the QW. Low-temperature (4 K) time-resolved PL measurements show a decay time of ≃40-70 ns from the transition between Ga(As)Sb QDs and InGaAs QW which is longer than that of the transition between Ga(As)Sb QDs and GaAs two-dimensional electron gas (≃30 ns).
UR - http://www.scopus.com/inward/record.url?scp=47249108029&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=47249108029&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/19/29/295704
DO - 10.1088/0957-4484/19/29/295704
M3 - Article
VL - 19
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 29
M1 - 295704
ER -