Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes

Ivan A. Moreno-Hernandez, Bruce S. Brunschwig, Nathan S Lewis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Photoelectrodes without a p–n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnOx) layers applied to n-Si wafers after forming a thin chemically oxidized SiOx layer can passivate the Si surface while producing ≈620 mV photovoltage under 100 mW cm−2 of simulated sunlight. The SnOx layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen-evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 m H2SO4(aq). Ideal regenerative solar-to-O2(g) efficiencies of 4.1% and 3.7%, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H2SO4(aq) with Pt/IrOx layers as OER catalysts. Stable photocurrents for >100 h are obtained for electrodes with patterned catalyst layers in both 1.0 m KOH(aq) and 1.0 m H2SO4(aq).

Original languageEnglish
Article number1801155
JournalAdvanced Energy Materials
Volume8
Issue number24
DOIs
Publication statusPublished - Aug 27 2018

Fingerprint

Silicon
Tin oxides
Electrolytes
Heterojunctions
Oxygen
Oxidation
Catalysts
Water
Ohmic contacts
Electrocatalysts
Photocurrents
Charge transfer
Semiconductor materials
Electrodes
stannic oxide

Keywords

  • heterojunctions
  • photoanodes
  • photoelectrochemistry
  • water oxidation
  • water splitting

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes. / Moreno-Hernandez, Ivan A.; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Advanced Energy Materials, Vol. 8, No. 24, 1801155, 27.08.2018.

Research output: Contribution to journalArticle

@article{af65d504b81c4fefb05c5fc7aadc9604,
title = "Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes",
abstract = "Photoelectrodes without a p–n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnOx) layers applied to n-Si wafers after forming a thin chemically oxidized SiOx layer can passivate the Si surface while producing ≈620 mV photovoltage under 100 mW cm−2 of simulated sunlight. The SnOx layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen-evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 m H2SO4(aq). Ideal regenerative solar-to-O2(g) efficiencies of 4.1{\%} and 3.7{\%}, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H2SO4(aq) with Pt/IrOx layers as OER catalysts. Stable photocurrents for >100 h are obtained for electrodes with patterned catalyst layers in both 1.0 m KOH(aq) and 1.0 m H2SO4(aq).",
keywords = "heterojunctions, photoanodes, photoelectrochemistry, water oxidation, water splitting",
author = "Moreno-Hernandez, {Ivan A.} and Brunschwig, {Bruce S.} and Lewis, {Nathan S}",
year = "2018",
month = "8",
day = "27",
doi = "10.1002/aenm.201801155",
language = "English",
volume = "8",
journal = "Advanced Energy Materials",
issn = "1614-6832",
publisher = "Wiley-VCH Verlag",
number = "24",

}

TY - JOUR

T1 - Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes

AU - Moreno-Hernandez, Ivan A.

AU - Brunschwig, Bruce S.

AU - Lewis, Nathan S

PY - 2018/8/27

Y1 - 2018/8/27

N2 - Photoelectrodes without a p–n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnOx) layers applied to n-Si wafers after forming a thin chemically oxidized SiOx layer can passivate the Si surface while producing ≈620 mV photovoltage under 100 mW cm−2 of simulated sunlight. The SnOx layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen-evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 m H2SO4(aq). Ideal regenerative solar-to-O2(g) efficiencies of 4.1% and 3.7%, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H2SO4(aq) with Pt/IrOx layers as OER catalysts. Stable photocurrents for >100 h are obtained for electrodes with patterned catalyst layers in both 1.0 m KOH(aq) and 1.0 m H2SO4(aq).

AB - Photoelectrodes without a p–n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnOx) layers applied to n-Si wafers after forming a thin chemically oxidized SiOx layer can passivate the Si surface while producing ≈620 mV photovoltage under 100 mW cm−2 of simulated sunlight. The SnOx layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen-evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 m H2SO4(aq). Ideal regenerative solar-to-O2(g) efficiencies of 4.1% and 3.7%, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H2SO4(aq) with Pt/IrOx layers as OER catalysts. Stable photocurrents for >100 h are obtained for electrodes with patterned catalyst layers in both 1.0 m KOH(aq) and 1.0 m H2SO4(aq).

KW - heterojunctions

KW - photoanodes

KW - photoelectrochemistry

KW - water oxidation

KW - water splitting

UR - http://www.scopus.com/inward/record.url?scp=85050873377&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050873377&partnerID=8YFLogxK

U2 - 10.1002/aenm.201801155

DO - 10.1002/aenm.201801155

M3 - Article

VL - 8

JO - Advanced Energy Materials

JF - Advanced Energy Materials

SN - 1614-6832

IS - 24

M1 - 1801155

ER -