@inproceedings{fdc57b3700dd40c2af5324b78191f8b9,
title = "Tl-based wide gap semiconductor materials for x-ray and gamma ray detection",
abstract = "The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.",
keywords = "Photoconductivity, Tl-chalcogenide, Wide gap semiconductor, X-ray detector",
author = "Zhifu Liu and Peters, {J. A.} and C. Zang and Cho, {Nam Ki} and Wessels, {Bruce W.} and Simon Johnsen and Sebastian Peter and John Androulakis and Kanatzidis, {Mercouri G.} and Song, {Jung Hwan} and Hosub Jin and Freeman, {Arthur J.}",
year = "2011",
month = jul,
day = "21",
doi = "10.1117/12.883230",
language = "English",
isbn = "9780819485922",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII",
note = "Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII ; Conference date: 26-04-2011 Through 28-04-2011",
}