Abstract
The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 8018 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII - Orlando, FL, United States Duration: Apr 26 2011 → Apr 28 2011 |
Other
| Other | Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII |
|---|---|
| Country | United States |
| City | Orlando, FL |
| Period | 4/26/11 → 4/28/11 |
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Keywords
- Photoconductivity
- Tl-chalcogenide
- Wide gap semiconductor
- X-ray detector
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. / Liu, Zhifu; Peters, J. A.; Zang, C.; Cho, Nam Ki; Wessels, Bruce W.; Johnsen, Simon; Peter, Sebastian; Androulakis, John; Kanatzidis, Mercouri G; Song, Jung Hwan; Jin, Hosub; Freeman, Arthur J.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8018 2011. 80180H.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Tl-based wide gap semiconductor materials for x-ray and gamma ray detection
AU - Liu, Zhifu
AU - Peters, J. A.
AU - Zang, C.
AU - Cho, Nam Ki
AU - Wessels, Bruce W.
AU - Johnsen, Simon
AU - Peter, Sebastian
AU - Androulakis, John
AU - Kanatzidis, Mercouri G
AU - Song, Jung Hwan
AU - Jin, Hosub
AU - Freeman, Arthur J
PY - 2011
Y1 - 2011
N2 - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.
AB - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.
KW - Photoconductivity
KW - Tl-chalcogenide
KW - Wide gap semiconductor
KW - X-ray detector
UR - http://www.scopus.com/inward/record.url?scp=79960397073&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960397073&partnerID=8YFLogxK
U2 - 10.1117/12.883230
DO - 10.1117/12.883230
M3 - Conference contribution
SN - 9780819485922
VL - 8018
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -