Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu; J. A. Peters; C. Zang; Nam Ki Cho; Bruce W. Wessels; Simon Johnsen; Sebastian Peter; John Androulakis; Mercouri G. Kanatzidis; Jung Hwan Song; Hosub Jin; Arthur J. Freeman

doi:10.1117/12.883230

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu, J. A. Peters, C. Zang, Nam Ki Cho, Bruce W. Wessels, Simon Johnsen, Sebastian Peter, John Androulakis, Mercouri G. Kanatzidis, Jung Hwan Song, Hosub Jin, Arthur J. Freeman

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe₂, Tl₆I₄Se, and Tl ₂Au₄S₃ for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl₆I₄Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under ⁵⁷Co radiation, Tl₆I₄Se has a well-resolved spectral response and peak FWHM comparable to those of Cd_0.9Zn_0.1Te.

Original language	English
Title of host publication	Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
DOIs	https://doi.org/10.1117/12.883230
Publication status	Published - Jul 21 2011
Event	Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII - Orlando, FL, United States Duration: Apr 26 2011 → Apr 28 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8018
ISSN (Print)	0277-786X

Other

Other	Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
Country	United States
City	Orlando, FL
Period	4/26/11 → 4/28/11

Keywords

Photoconductivity
Tl-chalcogenide
Wide gap semiconductor
X-ray detector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.883230

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Cite this

Liu, Z., Peters, J. A., Zang, C., Cho, N. K., Wessels, B. W., Johnsen, S., Peter, S., Androulakis, J., Kanatzidis, M. G., Song, J. H., Jin, H., & Freeman, A. J. (2011). Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. In Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII [80180H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8018). https://doi.org/10.1117/12.883230

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. / Liu, Zhifu; Peters, J. A.; Zang, C.; Cho, Nam Ki; Wessels, Bruce W.; Johnsen, Simon; Peter, Sebastian; Androulakis, John; Kanatzidis, Mercouri G.; Song, Jung Hwan; Jin, Hosub; Freeman, Arthur J.

Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII. 2011. 80180H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, Z, Peters, JA, Zang, C, Cho, NK, Wessels, BW, Johnsen, S, Peter, S, Androulakis, J, Kanatzidis, MG, Song, JH, Jin, H & Freeman, AJ 2011, Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. in Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII., 80180H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8018, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII, Orlando, FL, United States, 4/26/11. https://doi.org/10.1117/12.883230

Liu, Zhifu ; Peters, J. A. ; Zang, C. ; Cho, Nam Ki ; Wessels, Bruce W. ; Johnsen, Simon ; Peter, Sebastian ; Androulakis, John ; Kanatzidis, Mercouri G. ; Song, Jung Hwan ; Jin, Hosub ; Freeman, Arthur J. / Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.",

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AU - Liu, Zhifu

AU - Peters, J. A.

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AU - Cho, Nam Ki

AU - Wessels, Bruce W.

AU - Johnsen, Simon

AU - Peter, Sebastian

AU - Androulakis, John

AU - Kanatzidis, Mercouri G.

AU - Song, Jung Hwan

AU - Jin, Hosub

AU - Freeman, Arthur J.

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N2 - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

AB - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

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KW - Tl-chalcogenide

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KW - X-ray detector

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