Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu, J. A. Peters, C. Zang, Nam Ki Cho, Bruce W. Wessels, Simon Johnsen, Sebastian Peter, John Androulakis, Mercouri G Kanatzidis, Jung Hwan Song, Hosub Jin, Arthur J Freeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8018
DOIs
Publication statusPublished - 2011
EventChemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII - Orlando, FL, United States
Duration: Apr 26 2011Apr 28 2011

Other

OtherChemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
CountryUnited States
CityOrlando, FL
Period4/26/114/28/11

Fingerprint

Gamma Rays
Gamma rays
Half line
Semiconductors
rays
Radiation
gamma rays
CdZnTe
Semiconductor materials
X rays
Infrared transmission
Spectral Response
Crystal growth from melt
Bridgman method
Optical Absorption
Electronic Properties
Band Gap
radiation
Full width at half maximum
spectral sensitivity

Keywords

  • Photoconductivity
  • Tl-chalcogenide
  • Wide gap semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Liu, Z., Peters, J. A., Zang, C., Cho, N. K., Wessels, B. W., Johnsen, S., ... Freeman, A. J. (2011). Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8018). [80180H] https://doi.org/10.1117/12.883230

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. / Liu, Zhifu; Peters, J. A.; Zang, C.; Cho, Nam Ki; Wessels, Bruce W.; Johnsen, Simon; Peter, Sebastian; Androulakis, John; Kanatzidis, Mercouri G; Song, Jung Hwan; Jin, Hosub; Freeman, Arthur J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8018 2011. 80180H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, Z, Peters, JA, Zang, C, Cho, NK, Wessels, BW, Johnsen, S, Peter, S, Androulakis, J, Kanatzidis, MG, Song, JH, Jin, H & Freeman, AJ 2011, Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8018, 80180H, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII, Orlando, FL, United States, 4/26/11. https://doi.org/10.1117/12.883230
Liu Z, Peters JA, Zang C, Cho NK, Wessels BW, Johnsen S et al. Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8018. 2011. 80180H https://doi.org/10.1117/12.883230
Liu, Zhifu ; Peters, J. A. ; Zang, C. ; Cho, Nam Ki ; Wessels, Bruce W. ; Johnsen, Simon ; Peter, Sebastian ; Androulakis, John ; Kanatzidis, Mercouri G ; Song, Jung Hwan ; Jin, Hosub ; Freeman, Arthur J. / Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8018 2011.
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AU - Johnsen, Simon

AU - Peter, Sebastian

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AB - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

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