TlSbS2: A Semiconductor for Hard Radiation Detection

Wenwen Lin, Haijie Chen, Jiangang He, Constantinos C. Stoumpos, Zhifu Liu, Sanjib Das, Joon Il Kim, Kyle M. McCall, Bruce W. Wessels, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the quasi-2D semiconductor compound TlSbS2 as a new hard radiation detection material. This compound crystallizes in the triclinic P-1 space group, with a direct bandgap of 1.67 eV and high chemical stability. Thanks to its congruent melting at 484 °C, 1 cm-sized single crystals were grown from stoichiometric melts by the Bridgman method. The device exhibits a high resistivity of >1010 ω·cm, and responds to 22.4 keV Ag X-rays and 5.5 MeV a-particles from 241Am at room temperature. Power-dependent photoluminescence spectra at 17 K reveal that the near-band emission bands peaked at 1.61 and 1.53 eV can be ascribed to donor-acceptor pair recombination. The mobility-lifetime product for electrons along the perpendicular direction with respect to the (0k0) cleavage planes was estimated as 2.4 × 10-6 cm2·V-1, based on spectral response against a-particles. Drift mobility measurements based on a time-of-flight technique using a-particle response reveals an electron mobility of 13.2 ± 2.6 cm2·V-1·s-1. Electronic band structure calculations based on the density functional theory indicate that the lowest effective mass and, thus, the best charge transport are along the (0k0) planes.

Original languageEnglish
Pages (from-to)2891-2898
Number of pages8
JournalACS Photonics
Volume4
Issue number11
DOIs
Publication statusPublished - Nov 15 2017

Fingerprint

Semiconductors
Crystal growth from melt
Electron mobility
Chemical stability
Band structure
Density functional theory
Charge transfer
Photoluminescence
Melting
Energy gap
Single crystals
Electrons
Radiation
Semiconductor materials
X rays
radiation
Freezing
Genetic Recombination
Bridgman method
X-Rays

Keywords

  • crystal growth
  • hard radiation detection
  • photon detection
  • semiconductor detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Lin, W., Chen, H., He, J., Stoumpos, C. C., Liu, Z., Das, S., ... Kanatzidis, M. G. (2017). TlSbS2: A Semiconductor for Hard Radiation Detection. ACS Photonics, 4(11), 2891-2898. https://doi.org/10.1021/acsphotonics.7b00891

TlSbS2 : A Semiconductor for Hard Radiation Detection. / Lin, Wenwen; Chen, Haijie; He, Jiangang; Stoumpos, Constantinos C.; Liu, Zhifu; Das, Sanjib; Kim, Joon Il; McCall, Kyle M.; Wessels, Bruce W.; Kanatzidis, Mercouri G.

In: ACS Photonics, Vol. 4, No. 11, 15.11.2017, p. 2891-2898.

Research output: Contribution to journalArticle

Lin, W, Chen, H, He, J, Stoumpos, CC, Liu, Z, Das, S, Kim, JI, McCall, KM, Wessels, BW & Kanatzidis, MG 2017, 'TlSbS2: A Semiconductor for Hard Radiation Detection', ACS Photonics, vol. 4, no. 11, pp. 2891-2898. https://doi.org/10.1021/acsphotonics.7b00891
Lin W, Chen H, He J, Stoumpos CC, Liu Z, Das S et al. TlSbS2: A Semiconductor for Hard Radiation Detection. ACS Photonics. 2017 Nov 15;4(11):2891-2898. https://doi.org/10.1021/acsphotonics.7b00891
Lin, Wenwen ; Chen, Haijie ; He, Jiangang ; Stoumpos, Constantinos C. ; Liu, Zhifu ; Das, Sanjib ; Kim, Joon Il ; McCall, Kyle M. ; Wessels, Bruce W. ; Kanatzidis, Mercouri G. / TlSbS2 : A Semiconductor for Hard Radiation Detection. In: ACS Photonics. 2017 ; Vol. 4, No. 11. pp. 2891-2898.
@article{6632cf9e6d48420eb8a2d660aae53972,
title = "TlSbS2: A Semiconductor for Hard Radiation Detection",
abstract = "We report the quasi-2D semiconductor compound TlSbS2 as a new hard radiation detection material. This compound crystallizes in the triclinic P-1 space group, with a direct bandgap of 1.67 eV and high chemical stability. Thanks to its congruent melting at 484 °C, 1 cm-sized single crystals were grown from stoichiometric melts by the Bridgman method. The device exhibits a high resistivity of >1010 ω·cm, and responds to 22.4 keV Ag X-rays and 5.5 MeV a-particles from 241Am at room temperature. Power-dependent photoluminescence spectra at 17 K reveal that the near-band emission bands peaked at 1.61 and 1.53 eV can be ascribed to donor-acceptor pair recombination. The mobility-lifetime product for electrons along the perpendicular direction with respect to the (0k0) cleavage planes was estimated as 2.4 × 10-6 cm2·V-1, based on spectral response against a-particles. Drift mobility measurements based on a time-of-flight technique using a-particle response reveals an electron mobility of 13.2 ± 2.6 cm2·V-1·s-1. Electronic band structure calculations based on the density functional theory indicate that the lowest effective mass and, thus, the best charge transport are along the (0k0) planes.",
keywords = "crystal growth, hard radiation detection, photon detection, semiconductor detector",
author = "Wenwen Lin and Haijie Chen and Jiangang He and Stoumpos, {Constantinos C.} and Zhifu Liu and Sanjib Das and Kim, {Joon Il} and McCall, {Kyle M.} and Wessels, {Bruce W.} and Kanatzidis, {Mercouri G}",
year = "2017",
month = "11",
day = "15",
doi = "10.1021/acsphotonics.7b00891",
language = "English",
volume = "4",
pages = "2891--2898",
journal = "ACS Photonics",
issn = "2330-4022",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - TlSbS2

T2 - A Semiconductor for Hard Radiation Detection

AU - Lin, Wenwen

AU - Chen, Haijie

AU - He, Jiangang

AU - Stoumpos, Constantinos C.

AU - Liu, Zhifu

AU - Das, Sanjib

AU - Kim, Joon Il

AU - McCall, Kyle M.

AU - Wessels, Bruce W.

AU - Kanatzidis, Mercouri G

PY - 2017/11/15

Y1 - 2017/11/15

N2 - We report the quasi-2D semiconductor compound TlSbS2 as a new hard radiation detection material. This compound crystallizes in the triclinic P-1 space group, with a direct bandgap of 1.67 eV and high chemical stability. Thanks to its congruent melting at 484 °C, 1 cm-sized single crystals were grown from stoichiometric melts by the Bridgman method. The device exhibits a high resistivity of >1010 ω·cm, and responds to 22.4 keV Ag X-rays and 5.5 MeV a-particles from 241Am at room temperature. Power-dependent photoluminescence spectra at 17 K reveal that the near-band emission bands peaked at 1.61 and 1.53 eV can be ascribed to donor-acceptor pair recombination. The mobility-lifetime product for electrons along the perpendicular direction with respect to the (0k0) cleavage planes was estimated as 2.4 × 10-6 cm2·V-1, based on spectral response against a-particles. Drift mobility measurements based on a time-of-flight technique using a-particle response reveals an electron mobility of 13.2 ± 2.6 cm2·V-1·s-1. Electronic band structure calculations based on the density functional theory indicate that the lowest effective mass and, thus, the best charge transport are along the (0k0) planes.

AB - We report the quasi-2D semiconductor compound TlSbS2 as a new hard radiation detection material. This compound crystallizes in the triclinic P-1 space group, with a direct bandgap of 1.67 eV and high chemical stability. Thanks to its congruent melting at 484 °C, 1 cm-sized single crystals were grown from stoichiometric melts by the Bridgman method. The device exhibits a high resistivity of >1010 ω·cm, and responds to 22.4 keV Ag X-rays and 5.5 MeV a-particles from 241Am at room temperature. Power-dependent photoluminescence spectra at 17 K reveal that the near-band emission bands peaked at 1.61 and 1.53 eV can be ascribed to donor-acceptor pair recombination. The mobility-lifetime product for electrons along the perpendicular direction with respect to the (0k0) cleavage planes was estimated as 2.4 × 10-6 cm2·V-1, based on spectral response against a-particles. Drift mobility measurements based on a time-of-flight technique using a-particle response reveals an electron mobility of 13.2 ± 2.6 cm2·V-1·s-1. Electronic band structure calculations based on the density functional theory indicate that the lowest effective mass and, thus, the best charge transport are along the (0k0) planes.

KW - crystal growth

KW - hard radiation detection

KW - photon detection

KW - semiconductor detector

UR - http://www.scopus.com/inward/record.url?scp=85034104900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85034104900&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.7b00891

DO - 10.1021/acsphotonics.7b00891

M3 - Article

AN - SCOPUS:85034104900

VL - 4

SP - 2891

EP - 2898

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 11

ER -