TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Wenwen Lin, Constantinos C. Stoumpos, Zhifu Liu, Sanjib Das, Oleg Y. Kontsevoi, Yihui He, Christos D. Malliakas, Haijie Chen, Bruce W. Wessels, Mercouri G. Kanatzidis

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼1010 ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10-3 cm2·V-1 and 94 ± 16 cm2·V-1·s-1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.

Original languageEnglish
Pages (from-to)1805-1813
Number of pages9
JournalACS Photonics
Issue number7
Publication statusPublished - Jul 19 2017


  • crystal growth
  • halide perovskite
  • hard radiation detection
  • photon detection
  • semiconductor detector
  • γ-ray

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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