TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Wenwen Lin, Constantinos C. Stoumpos, Zhifu Liu, Sanjib Das, Oleg Y. Kontsevoi, Yihui He, Christos D. Malliakas, Haijie Chen, Bruce W. Wessels, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼1010 ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10-3 cm2·V-1 and 94 ± 16 cm2·V-1·s-1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.

Original languageEnglish
Pages (from-to)1805-1813
Number of pages9
JournalACS Photonics
Volume4
Issue number7
DOIs
Publication statusPublished - Jul 19 2017

Fingerprint

Semiconductors
Crystal growth from melt
Electron Transport
Bias voltage
Photons
Band structure
halides
rays
Energy gap
Crystal structure
Topology
X-Rays
Single crystals
Electrons
Polarization
Semiconductor materials
Detectors
X rays
Equipment and Supplies
Mechanical properties

Keywords

  • crystal growth
  • halide perovskite
  • hard radiation detection
  • photon detection
  • semiconductor detector
  • γ-ray

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature. / Lin, Wenwen; Stoumpos, Constantinos C.; Liu, Zhifu; Das, Sanjib; Kontsevoi, Oleg Y.; He, Yihui; Malliakas, Christos D.; Chen, Haijie; Wessels, Bruce W.; Kanatzidis, Mercouri G.

In: ACS Photonics, Vol. 4, No. 7, 19.07.2017, p. 1805-1813.

Research output: Contribution to journalArticle

Lin, W, Stoumpos, CC, Liu, Z, Das, S, Kontsevoi, OY, He, Y, Malliakas, CD, Chen, H, Wessels, BW & Kanatzidis, MG 2017, 'TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature', ACS Photonics, vol. 4, no. 7, pp. 1805-1813. https://doi.org/10.1021/acsphotonics.7b00388
Lin, Wenwen ; Stoumpos, Constantinos C. ; Liu, Zhifu ; Das, Sanjib ; Kontsevoi, Oleg Y. ; He, Yihui ; Malliakas, Christos D. ; Chen, Haijie ; Wessels, Bruce W. ; Kanatzidis, Mercouri G. / TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature. In: ACS Photonics. 2017 ; Vol. 4, No. 7. pp. 1805-1813.
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