Sol-Gel derived PZT thin films were irradiated to a total-dose of 1 Mrad(Si), or 86 krad(PZT), under open circuit bias. An asymmetric distortion in the hysteresis curves was observed. The distortion depends on the polarization state of the capacitor before irradiation. Post-irradiation electrical cycling makes the hysteresis loops symmetric initially, but results in fatigue effects. The leakage and switching current behavior after irradiation and post-rad cycling were studied using a static current vs. voltage measurement. Mechanisms of radiation-induced distortion and the fatigue effect during post-rad cycling are discussed.
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering