Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors

Sriram K. Dixit, Sarit Dhar, John Rozen, Sanwu Wang, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides, John R. Williams, Leonard C Feldman

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The total dose radiation response of nitrided and nonnitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO2/Si and SiO2/SiC are responsible for the observed dissimilarities in charge trapping behavior.

Original languageEnglish
Pages (from-to)3687-3692
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number6
DOIs
Publication statusPublished - Dec 2006

Fingerprint

MOS capacitors
Charge trapping
Dosimetry
capacitors
trapping
dosage
MOS devices
radiation
Charge density
metal oxide semiconductors
Energy gap
Capacitors
traps
Radiation
X rays
Metals
x rays
Oxide semiconductors

Keywords

  • Capacitors
  • Metal-oxide-semiconductor (MOS)
  • Nitrided
  • Radiation damage
  • Silicon carbide (SiC)
  • Total dose
  • X-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors. / Dixit, Sriram K.; Dhar, Sarit; Rozen, John; Wang, Sanwu; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Pantelides, Sokrates T.; Williams, John R.; Feldman, Leonard C.

In: IEEE Transactions on Nuclear Science, Vol. 53, No. 6, 12.2006, p. 3687-3692.

Research output: Contribution to journalArticle

Dixit, SK, Dhar, S, Rozen, J, Wang, S, Schrimpf, RD, Fleetwood, DM, Pantelides, ST, Williams, JR & Feldman, LC 2006, 'Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors', IEEE Transactions on Nuclear Science, vol. 53, no. 6, pp. 3687-3692. https://doi.org/10.1109/TNS.2006.885164
Dixit, Sriram K. ; Dhar, Sarit ; Rozen, John ; Wang, Sanwu ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Pantelides, Sokrates T. ; Williams, John R. ; Feldman, Leonard C. / Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors. In: IEEE Transactions on Nuclear Science. 2006 ; Vol. 53, No. 6. pp. 3687-3692.
@article{5afda5dc2151430e8b5e7e3dbcb2f93f,
title = "Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors",
abstract = "The total dose radiation response of nitrided and nonnitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO2/Si and SiO2/SiC are responsible for the observed dissimilarities in charge trapping behavior.",
keywords = "Capacitors, Metal-oxide-semiconductor (MOS), Nitrided, Radiation damage, Silicon carbide (SiC), Total dose, X-ray",
author = "Dixit, {Sriram K.} and Sarit Dhar and John Rozen and Sanwu Wang and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Pantelides, {Sokrates T.} and Williams, {John R.} and Feldman, {Leonard C}",
year = "2006",
month = "12",
doi = "10.1109/TNS.2006.885164",
language = "English",
volume = "53",
pages = "3687--3692",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors

AU - Dixit, Sriram K.

AU - Dhar, Sarit

AU - Rozen, John

AU - Wang, Sanwu

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - Pantelides, Sokrates T.

AU - Williams, John R.

AU - Feldman, Leonard C

PY - 2006/12

Y1 - 2006/12

N2 - The total dose radiation response of nitrided and nonnitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO2/Si and SiO2/SiC are responsible for the observed dissimilarities in charge trapping behavior.

AB - The total dose radiation response of nitrided and nonnitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO2/Si and SiO2/SiC are responsible for the observed dissimilarities in charge trapping behavior.

KW - Capacitors

KW - Metal-oxide-semiconductor (MOS)

KW - Nitrided

KW - Radiation damage

KW - Silicon carbide (SiC)

KW - Total dose

KW - X-ray

UR - http://www.scopus.com/inward/record.url?scp=33846382671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846382671&partnerID=8YFLogxK

U2 - 10.1109/TNS.2006.885164

DO - 10.1109/TNS.2006.885164

M3 - Article

AN - SCOPUS:33846382671

VL - 53

SP - 3687

EP - 3692

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -