Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors

Sriram K. Dixit, Sarit Dhar, John Rozen, Sanwu Wang, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides, John R. Williams, Leonard C. Feldman

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35 Citations (Scopus)

Abstract

The total dose radiation response of nitrided and nonnitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO2/Si and SiO2/SiC are responsible for the observed dissimilarities in charge trapping behavior.

Original languageEnglish
Pages (from-to)3687-3692
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume53
Issue number6
DOIs
Publication statusPublished - Dec 1 2006

Keywords

  • Capacitors
  • Metal-oxide-semiconductor (MOS)
  • Nitrided
  • Radiation damage
  • Silicon carbide (SiC)
  • Total dose
  • X-ray

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Dixit, S. K., Dhar, S., Rozen, J., Wang, S., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2006). Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors. IEEE Transactions on Nuclear Science, 53(6), 3687-3692. https://doi.org/10.1109/TNS.2006.885164