Transition Structure at the [Formula presented] Interface

Angelo Bongiorno, Alfredo Pasquarello, Mark S. Hybertsen, Leonard C Feldman

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We characterize the transition structure at the [Formula presented] interface by addressing the inverse ion-scattering problem. We achieve sensitivity to Si displacements at the interface by carrying out ion-scattering measurements in the channeling geometry for varying ion energies. To interpret our experimental results, we generate realistic atomic-scale models using a first-principles approach and carry out ion-scattering simulations based on classical interatomic potentials. Silicon displacements larger than [Formula presented] are found to propagate for three layers into the Si substrate, ruling out a transition structure with regularly ordered O bridges, as recently proposed.

Original languageEnglish
Number of pages1
JournalPhysical Review Letters
Volume90
Issue number18
DOIs
Publication statusPublished - Jan 1 2003

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ion scattering
inverse scattering
scale models
sensitivity
silicon
geometry
ions
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Transition Structure at the [Formula presented] Interface. / Bongiorno, Angelo; Pasquarello, Alfredo; Hybertsen, Mark S.; Feldman, Leonard C.

In: Physical Review Letters, Vol. 90, No. 18, 01.01.2003.

Research output: Contribution to journalArticle

Bongiorno, Angelo ; Pasquarello, Alfredo ; Hybertsen, Mark S. ; Feldman, Leonard C. / Transition Structure at the [Formula presented] Interface. In: Physical Review Letters. 2003 ; Vol. 90, No. 18.
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