Transition structure at the Si(100)-SiO2 interface

Angelo Bongiorno, A. Pasquarello, Mark S. Hybertsen, Leonard C Feldman

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 Å propagate from the interface into the three upper layers of the Si lattice.

Original languageEnglish
JournalPhysical Review Letters
Volume90
Issue number18
Publication statusPublished - May 9 2003

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ion scattering
silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Bongiorno, A., Pasquarello, A., Hybertsen, M. S., & Feldman, L. C. (2003). Transition structure at the Si(100)-SiO2 interface. Physical Review Letters, 90(18).

Transition structure at the Si(100)-SiO2 interface. / Bongiorno, Angelo; Pasquarello, A.; Hybertsen, Mark S.; Feldman, Leonard C.

In: Physical Review Letters, Vol. 90, No. 18, 09.05.2003.

Research output: Contribution to journalArticle

Bongiorno, A, Pasquarello, A, Hybertsen, MS & Feldman, LC 2003, 'Transition structure at the Si(100)-SiO2 interface', Physical Review Letters, vol. 90, no. 18.
Bongiorno A, Pasquarello A, Hybertsen MS, Feldman LC. Transition structure at the Si(100)-SiO2 interface. Physical Review Letters. 2003 May 9;90(18).
Bongiorno, Angelo ; Pasquarello, A. ; Hybertsen, Mark S. ; Feldman, Leonard C. / Transition structure at the Si(100)-SiO2 interface. In: Physical Review Letters. 2003 ; Vol. 90, No. 18.
@article{035a99eb8fae47089f0fd1b7888937ff,
title = "Transition structure at the Si(100)-SiO2 interface",
abstract = "Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 {\AA} propagate from the interface into the three upper layers of the Si lattice.",
author = "Angelo Bongiorno and A. Pasquarello and Hybertsen, {Mark S.} and Feldman, {Leonard C}",
year = "2003",
month = "5",
day = "9",
language = "English",
volume = "90",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "18",

}

TY - JOUR

T1 - Transition structure at the Si(100)-SiO2 interface

AU - Bongiorno, Angelo

AU - Pasquarello, A.

AU - Hybertsen, Mark S.

AU - Feldman, Leonard C

PY - 2003/5/9

Y1 - 2003/5/9

N2 - Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 Å propagate from the interface into the three upper layers of the Si lattice.

AB - Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 Å propagate from the interface into the three upper layers of the Si lattice.

UR - http://www.scopus.com/inward/record.url?scp=0037596665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037596665&partnerID=8YFLogxK

M3 - Article

VL - 90

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 18

ER -