@article{035a99eb8fae47089f0fd1b7888937ff,
title = "Transition structure at the Si(100)-SiO2 interface",
abstract = "Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 {\AA} propagate from the interface into the three upper layers of the Si lattice.",
author = "Angelo Bongiorno and A. Pasquarello and Hybertsen, {Mark S.} and Feldman, {L. C.}",
note = "Funding Information: The authors thank Jochen Mullhaeuser for his contribution to the experimental part of this work. L. C. F. acknowledges useful discussions with C. R. Cirba and R. D. Schrimpf concerning electron transport at silicon interfaces. A. B. and A. P. acknowledge support from the Swiss National Science Foundation (Grants No. 21-55450.98 and No. 620-57850.99) and the Swiss Center for Scientific Computing. Support from DARPA and ONR (L. C. F.) is also acknowledged.",
year = "2003",
month = may,
day = "9",
language = "English",
volume = "90",
pages = "186101/1--186101/4",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "18",
}