Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 Å propagate from the interface into the three upper layers of the Si lattice.
|Journal||Physical review letters|
|Publication status||Published - May 9 2003|
ASJC Scopus subject areas
- Physics and Astronomy(all)