Transition structure at the Si(100)-SiO2 interface

Angelo Bongiorno, A. Pasquarello, Mark S. Hybertsen, L. C. Feldman

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Abstract

Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 Å propagate from the interface into the three upper layers of the Si lattice.

Original languageEnglish
Pages (from-to)186101/1-186101/4
JournalPhysical review letters
Volume90
Issue number18
Publication statusPublished - May 9 2003

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Bongiorno, A., Pasquarello, A., Hybertsen, M. S., & Feldman, L. C. (2003). Transition structure at the Si(100)-SiO2 interface. Physical review letters, 90(18), 186101/1-186101/4.