Transition structure at the Si(100)-SiO2 interface

Angelo Bongiorno; A. Pasquarello; Mark S. Hybertsen; L. C. Feldman

Transition structure at the Si(100)-SiO₂ interface

Angelo Bongiorno, A. Pasquarello, Mark S. Hybertsen, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article

82 Citations (Scopus)

Abstract

Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO₂ interface. It was inferred that silicon distortions larger than 0.09 Å propagate from the interface into the three upper layers of the Si lattice.

Original language	English
Pages (from-to)	186101/1-186101/4
Journal	Physical review letters
Volume	90
Issue number	18
Publication status	Published - May 9 2003

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Bongiorno, A., Pasquarello, A., Hybertsen, M. S., & Feldman, L. C. (2003). Transition structure at the Si(100)-SiO₂ interface. Physical review letters, 90(18), 186101/1-186101/4.

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abstract = "Ion-scattering experiments and theoretical modeling were combined to investigate the nature of the atomic arrangements at the Si(100)-SiO2 interface. It was inferred that silicon distortions larger than 0.09 {\AA} propagate from the interface into the three upper layers of the Si lattice.",

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