Abstract
Zinc-indium-tin oxide (ZITO) is a potential replacement for the currently used tin-doped indium oxide (ITO) as a transparent conducting oxide (TCO) for optoelectronic devices. At the present time ITO is the material of choice for the TCO layer, but the increasing cost of indium metal and the advent of new technologies will require alternative TCOs. Over the past 15 years, bulk and thin film studies have been amassed that report the electrical and optical properties of various ZITO compositions. This review will examine the reported data and demonstrate that the bulk subsolidus phase diagram can act as a guide to understanding the numerous and varied results reported for thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 3569-3579 |
| Number of pages | 11 |
| Journal | Chemistry of Materials |
| Volume | 22 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Jun 22 2010 |
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ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)
- Chemistry(all)
Cite this
Transparent conducting oxides in the ZnO-In2O 3-SnO2 system. / Hoel, Cathleen A.; Mason, Thomas O; Gaillard, Jean François; Poeppelmeier, Kenneth R.
In: Chemistry of Materials, Vol. 22, No. 12, 22.06.2010, p. 3569-3579.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transparent conducting oxides in the ZnO-In2O 3-SnO2 system
AU - Hoel, Cathleen A.
AU - Mason, Thomas O
AU - Gaillard, Jean François
AU - Poeppelmeier, Kenneth R
PY - 2010/6/22
Y1 - 2010/6/22
N2 - Zinc-indium-tin oxide (ZITO) is a potential replacement for the currently used tin-doped indium oxide (ITO) as a transparent conducting oxide (TCO) for optoelectronic devices. At the present time ITO is the material of choice for the TCO layer, but the increasing cost of indium metal and the advent of new technologies will require alternative TCOs. Over the past 15 years, bulk and thin film studies have been amassed that report the electrical and optical properties of various ZITO compositions. This review will examine the reported data and demonstrate that the bulk subsolidus phase diagram can act as a guide to understanding the numerous and varied results reported for thin films.
AB - Zinc-indium-tin oxide (ZITO) is a potential replacement for the currently used tin-doped indium oxide (ITO) as a transparent conducting oxide (TCO) for optoelectronic devices. At the present time ITO is the material of choice for the TCO layer, but the increasing cost of indium metal and the advent of new technologies will require alternative TCOs. Over the past 15 years, bulk and thin film studies have been amassed that report the electrical and optical properties of various ZITO compositions. This review will examine the reported data and demonstrate that the bulk subsolidus phase diagram can act as a guide to understanding the numerous and varied results reported for thin films.
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U2 - 10.1021/cm1004592
DO - 10.1021/cm1004592
M3 - Article
VL - 22
SP - 3569
EP - 3579
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 12
ER -