Transparent conducting oxides: Texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor

Andrew W. Metz, John R. Ireland, Jian Guo Zheng, Ricardo P S M Lobo, Yu Yang, Jun Ni, Charlotte L. Stern, Vinayak P. Dravid, Nicole Bontemps, Carl R. Kannewurf, Kenneth R Poeppelmeier, Tobin J Marks

Research output: Contribution to journalArticle

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Abstract

A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5- hexafluoro-2,4-pentanedionato)(N,N-diethyl-N′,N′-dimethyl- ethylenediamine)cadmium(II), Cd(hfa)2(N,N-DE-N′,N′-DMEDA) , represents a particularly significant improvement over previously available Cd precursors, owing to the low melting point and robust thermal stability. High-quality CdO films were grown by MOCVD on glass and single-crystal MgO(100) between 300 and 412 °C. Film growth parameters and substrate surface have large effects on microstructure and electron carrier transport properties. Enhanced mobilities observed for highly biaxially textured films grown on MgO(100) vs glass are attributed, on the basis of DC charge transport and microstructure analysis, to a reduction in neutral impurity scattering and/or to a more densely packed grain microstructure. Although single-grained films grown on MgO(100) exhibit greater mobilities than analogues with discrete ∼100 nm grains and similar texture, this effect is attributed, on the basis of charge transport and Hall effect measurements as well as optical reflectivity analysis, to differences in carrier concentration rather than to reduced grain boundary scattering. Unprecedented conductivities and mobilities as high as 11,000 S/cm and 307 cm2/V·s, respectively, are obtained for epitaxial single-grained films (X-ray diffraction parameters: fwhmω = 0.30°, fwhmφ = 0.27°) grown in situ on MgO(100) at a relatively low temperature (400 °C).

Original languageEnglish
Pages (from-to)8477-8492
Number of pages16
JournalJournal of the American Chemical Society
Volume126
Issue number27
DOIs
Publication statusPublished - Jul 14 2004

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Organic Chemicals
ethylenediamine
Carrier mobility
Organic chemicals
Charge carriers
Cadmium
Oxides
Freezing
Glass
Chemical vapor deposition
Melting
Textures
Metals
Thin films
Microstructure
Charge transfer
Growth
Electron Transport
X-Ray Diffraction
Scattering

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Transparent conducting oxides : Texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor. / Metz, Andrew W.; Ireland, John R.; Zheng, Jian Guo; Lobo, Ricardo P S M; Yang, Yu; Ni, Jun; Stern, Charlotte L.; Dravid, Vinayak P.; Bontemps, Nicole; Kannewurf, Carl R.; Poeppelmeier, Kenneth R; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 126, No. 27, 14.07.2004, p. 8477-8492.

Research output: Contribution to journalArticle

Metz, Andrew W. ; Ireland, John R. ; Zheng, Jian Guo ; Lobo, Ricardo P S M ; Yang, Yu ; Ni, Jun ; Stern, Charlotte L. ; Dravid, Vinayak P. ; Bontemps, Nicole ; Kannewurf, Carl R. ; Poeppelmeier, Kenneth R ; Marks, Tobin J. / Transparent conducting oxides : Texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor. In: Journal of the American Chemical Society. 2004 ; Vol. 126, No. 27. pp. 8477-8492.
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abstract = "A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5- hexafluoro-2,4-pentanedionato)(N,N-diethyl-N′,N′-dimethyl- ethylenediamine)cadmium(II), Cd(hfa)2(N,N-DE-N′,N′-DMEDA) , represents a particularly significant improvement over previously available Cd precursors, owing to the low melting point and robust thermal stability. High-quality CdO films were grown by MOCVD on glass and single-crystal MgO(100) between 300 and 412 °C. Film growth parameters and substrate surface have large effects on microstructure and electron carrier transport properties. Enhanced mobilities observed for highly biaxially textured films grown on MgO(100) vs glass are attributed, on the basis of DC charge transport and microstructure analysis, to a reduction in neutral impurity scattering and/or to a more densely packed grain microstructure. Although single-grained films grown on MgO(100) exhibit greater mobilities than analogues with discrete ∼100 nm grains and similar texture, this effect is attributed, on the basis of charge transport and Hall effect measurements as well as optical reflectivity analysis, to differences in carrier concentration rather than to reduced grain boundary scattering. Unprecedented conductivities and mobilities as high as 11,000 S/cm and 307 cm2/V·s, respectively, are obtained for epitaxial single-grained films (X-ray diffraction parameters: fwhmω = 0.30°, fwhmφ = 0.27°) grown in situ on MgO(100) at a relatively low temperature (400 °C).",
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AU - Yang, Yu

AU - Ni, Jun

AU - Stern, Charlotte L.

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