Abstract
A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5- hexafluoro-2,4-pentanedionato)(N,N-diethyl-N′,N′-dimethyl- ethylenediamine)cadmium(II), Cd(hfa)2(N,N-DE-N′,N′-DMEDA) , represents a particularly significant improvement over previously available Cd precursors, owing to the low melting point and robust thermal stability. High-quality CdO films were grown by MOCVD on glass and single-crystal MgO(100) between 300 and 412 °C. Film growth parameters and substrate surface have large effects on microstructure and electron carrier transport properties. Enhanced mobilities observed for highly biaxially textured films grown on MgO(100) vs glass are attributed, on the basis of DC charge transport and microstructure analysis, to a reduction in neutral impurity scattering and/or to a more densely packed grain microstructure. Although single-grained films grown on MgO(100) exhibit greater mobilities than analogues with discrete ∼100 nm grains and similar texture, this effect is attributed, on the basis of charge transport and Hall effect measurements as well as optical reflectivity analysis, to differences in carrier concentration rather than to reduced grain boundary scattering. Unprecedented conductivities and mobilities as high as 11,000 S/cm and 307 cm2/V·s, respectively, are obtained for epitaxial single-grained films (X-ray diffraction parameters: fwhmω = 0.30°, fwhmφ = 0.27°) grown in situ on MgO(100) at a relatively low temperature (400 °C).
| Original language | English |
|---|---|
| Pages (from-to) | 8477-8492 |
| Number of pages | 16 |
| Journal | Journal of the American Chemical Society |
| Volume | 126 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - Jul 14 2004 |
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ASJC Scopus subject areas
- Chemistry(all)
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Transparent conducting oxides : Texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor. / Metz, Andrew W.; Ireland, John R.; Zheng, Jian Guo; Lobo, Ricardo P S M; Yang, Yu; Ni, Jun; Stern, Charlotte L.; Dravid, Vinayak P.; Bontemps, Nicole; Kannewurf, Carl R.; Poeppelmeier, Kenneth R; Marks, Tobin J.
In: Journal of the American Chemical Society, Vol. 126, No. 27, 14.07.2004, p. 8477-8492.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transparent conducting oxides
T2 - Texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor
AU - Metz, Andrew W.
AU - Ireland, John R.
AU - Zheng, Jian Guo
AU - Lobo, Ricardo P S M
AU - Yang, Yu
AU - Ni, Jun
AU - Stern, Charlotte L.
AU - Dravid, Vinayak P.
AU - Bontemps, Nicole
AU - Kannewurf, Carl R.
AU - Poeppelmeier, Kenneth R
AU - Marks, Tobin J
PY - 2004/7/14
Y1 - 2004/7/14
N2 - A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5- hexafluoro-2,4-pentanedionato)(N,N-diethyl-N′,N′-dimethyl- ethylenediamine)cadmium(II), Cd(hfa)2(N,N-DE-N′,N′-DMEDA) , represents a particularly significant improvement over previously available Cd precursors, owing to the low melting point and robust thermal stability. High-quality CdO films were grown by MOCVD on glass and single-crystal MgO(100) between 300 and 412 °C. Film growth parameters and substrate surface have large effects on microstructure and electron carrier transport properties. Enhanced mobilities observed for highly biaxially textured films grown on MgO(100) vs glass are attributed, on the basis of DC charge transport and microstructure analysis, to a reduction in neutral impurity scattering and/or to a more densely packed grain microstructure. Although single-grained films grown on MgO(100) exhibit greater mobilities than analogues with discrete ∼100 nm grains and similar texture, this effect is attributed, on the basis of charge transport and Hall effect measurements as well as optical reflectivity analysis, to differences in carrier concentration rather than to reduced grain boundary scattering. Unprecedented conductivities and mobilities as high as 11,000 S/cm and 307 cm2/V·s, respectively, are obtained for epitaxial single-grained films (X-ray diffraction parameters: fwhmω = 0.30°, fwhmφ = 0.27°) grown in situ on MgO(100) at a relatively low temperature (400 °C).
AB - A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5- hexafluoro-2,4-pentanedionato)(N,N-diethyl-N′,N′-dimethyl- ethylenediamine)cadmium(II), Cd(hfa)2(N,N-DE-N′,N′-DMEDA) , represents a particularly significant improvement over previously available Cd precursors, owing to the low melting point and robust thermal stability. High-quality CdO films were grown by MOCVD on glass and single-crystal MgO(100) between 300 and 412 °C. Film growth parameters and substrate surface have large effects on microstructure and electron carrier transport properties. Enhanced mobilities observed for highly biaxially textured films grown on MgO(100) vs glass are attributed, on the basis of DC charge transport and microstructure analysis, to a reduction in neutral impurity scattering and/or to a more densely packed grain microstructure. Although single-grained films grown on MgO(100) exhibit greater mobilities than analogues with discrete ∼100 nm grains and similar texture, this effect is attributed, on the basis of charge transport and Hall effect measurements as well as optical reflectivity analysis, to differences in carrier concentration rather than to reduced grain boundary scattering. Unprecedented conductivities and mobilities as high as 11,000 S/cm and 307 cm2/V·s, respectively, are obtained for epitaxial single-grained films (X-ray diffraction parameters: fwhmω = 0.30°, fwhmφ = 0.27°) grown in situ on MgO(100) at a relatively low temperature (400 °C).
UR - http://www.scopus.com/inward/record.url?scp=3142757304&partnerID=8YFLogxK
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U2 - 10.1021/ja039232z
DO - 10.1021/ja039232z
M3 - Article
C2 - 15238005
AN - SCOPUS:3142757304
VL - 126
SP - 8477
EP - 8492
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 27
ER -