Abstract
In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
| Original language | English |
|---|---|
| Pages (from-to) | 75-80 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 545 |
| Publication status | Published - Jan 1 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Fingerprint Dive into the research topics of 'Transport properties of doped CsBi<sub>4</sub>Te<sub>6</sub> thermoelectric materials'. Together they form a unique fingerprint.
Cite this
Brazis, P. W., Rocci, M., Chung, D. Y., Kanatzidis, M. G., & Kannewurf, C. R. (1999). Transport properties of doped CsBi4Te6 thermoelectric materials. Materials Research Society Symposium - Proceedings, 545, 75-80.