Abstract
In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 75-80 |
| Number of pages | 6 |
| Volume | 545 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
Other
| Other | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' |
|---|---|
| City | Boston, MA, USA |
| Period | 11/30/98 → 12/3/98 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Transport properties of doped CsBi4Te6 thermoelectric materials. / Brazis, Paul W.; Rocci, Melissa; Chung, Duck Young; Kanatzidis, Mercouri G; Kannewurf, Carl R.
Materials Research Society Symposium - Proceedings. Vol. 545 Materials Research Society, 1999. p. 75-80.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Transport properties of doped CsBi4Te6 thermoelectric materials
AU - Brazis, Paul W.
AU - Rocci, Melissa
AU - Chung, Duck Young
AU - Kanatzidis, Mercouri G
AU - Kannewurf, Carl R.
PY - 1999
Y1 - 1999
N2 - In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
AB - In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
UR - http://www.scopus.com/inward/record.url?scp=0032591248&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032591248&partnerID=8YFLogxK
M3 - Chapter
VL - 545
SP - 75
EP - 80
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -