Abstract
In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
Original language | English |
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Pages (from-to) | 75-80 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 545 |
Publication status | Published - Jan 1 1999 |
Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering