Transport properties of doped CsBi4Te6 thermoelectric materials

Paul W. Brazis, Melissa Rocci, Duck Young Chung, Mercouri G. Kanatzidis, Carl R. Kannewurf

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

Original languageEnglish
Pages (from-to)75-80
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume545
Publication statusPublished - Jan 1 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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