Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13

P. W. Brazis, J. R. Ireland, M. A. Lane, T. Kyratsi, D. Y. Chung, Mercouri G Kanatzidis, C. R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible thermoelectric applications. β-K2Bi8Se13 exhibits excellent electrical conductivity values at room temperature while maintaining high Seebeck coefficients. In this work, the optimization of the compound β-K2Bi8Se13 is continued by the introduction of varying concentrations of several different dopants. The value of x in K2Bi8-x SbxSe13 was varied in order to find the composition with minimum thermal conductivity. Where possible, transport measurements were carried out on both single crystal and polycrystalline ingot material. From these data, the trends in the key parameters were identified for optimizing the power factor and figure of merit.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Volume4
Publication statusPublished - 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

Other

OtherIEEE International Symposium on Circuits and Systems (ISCAS 2001)
CountryAustralia
CitySydney, NSW
Period5/6/015/9/01

Fingerprint

Transport properties
Seebeck coefficient
Ingots
Thermal conductivity
Doping (additives)
Single crystals
Chemical analysis
Temperature
Electric Conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Brazis, P. W., Ireland, J. R., Lane, M. A., Kyratsi, T., Chung, D. Y., Kanatzidis, M. G., & Kannewurf, C. R. (2001). Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 4)

Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13. / Brazis, P. W.; Ireland, J. R.; Lane, M. A.; Kyratsi, T.; Chung, D. Y.; Kanatzidis, Mercouri G; Kannewurf, C. R.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Brazis, PW, Ireland, JR, Lane, MA, Kyratsi, T, Chung, DY, Kanatzidis, MG & Kannewurf, CR 2001, Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.
Brazis PW, Ireland JR, Lane MA, Kyratsi T, Chung DY, Kanatzidis MG et al. Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13. In Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4. 2001
Brazis, P. W. ; Ireland, J. R. ; Lane, M. A. ; Kyratsi, T. ; Chung, D. Y. ; Kanatzidis, Mercouri G ; Kannewurf, C. R. / Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13. Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.
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