TY - JOUR
T1 - Trends in the open-circuit voltage of semiconductor/liquid interfaces
T2 - Studies of n-AlxGa1-xAs/CH3CN-Ferrocene+/0 and n-AlxGa1-xAs/KOH-Se-/2-(aq) junctions
AU - Casagrande, Louis G.
AU - Tufts, Bruce J.
AU - Lewis, Nathan S.
PY - 1991
Y1 - 1991
N2 - Trends in open-circuit voltage (Voc), short-circuit current density (Jsc), and energy conversion efficiency have been determined for the n-type AlxGa1-xAs series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH3CN-ferrocene+/0 and KOH-Se-/2-(aq) electrolytes. Voc increased linearly with increases in bandgap energy (Eg) of the n-AlxGa1-xAs alloy electrodes, with ΔVoc/ΔEg = 0.45 ± 0.04 V eV-1 in CH3CN and 0.41 ± 0.09 V eV-1 in KOH-Se-/2-(aq) at a light intensity sufficient to provide Jsc = 1.0 mA cm-2. Jsc values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of ΔVoc/ΔEg implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the AlxGa1-xAs alloy is increased. This is in contrast to the behavior of the n-GaAsxP1-x alloy series in the same electrolytes. The lower value of ΔKoc/ΔEg for n-AlxGa1-xAs also indicates that predictions of the "common anion rule" in solid-state barriers do not apply to this family of III-V semiconductor/liquid junctions.
AB - Trends in open-circuit voltage (Voc), short-circuit current density (Jsc), and energy conversion efficiency have been determined for the n-type AlxGa1-xAs series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH3CN-ferrocene+/0 and KOH-Se-/2-(aq) electrolytes. Voc increased linearly with increases in bandgap energy (Eg) of the n-AlxGa1-xAs alloy electrodes, with ΔVoc/ΔEg = 0.45 ± 0.04 V eV-1 in CH3CN and 0.41 ± 0.09 V eV-1 in KOH-Se-/2-(aq) at a light intensity sufficient to provide Jsc = 1.0 mA cm-2. Jsc values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of ΔVoc/ΔEg implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the AlxGa1-xAs alloy is increased. This is in contrast to the behavior of the n-GaAsxP1-x alloy series in the same electrolytes. The lower value of ΔKoc/ΔEg for n-AlxGa1-xAs also indicates that predictions of the "common anion rule" in solid-state barriers do not apply to this family of III-V semiconductor/liquid junctions.
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U2 - 10.1021/j100156a063
DO - 10.1021/j100156a063
M3 - Article
AN - SCOPUS:0343680835
VL - 95
SP - 1373
EP - 1380
JO - Journal of Physical Chemistry
JF - Journal of Physical Chemistry
SN - 0022-3654
IS - 3
ER -