Trends in the open-circuit voltage of semiconductor/liquid interfaces

Studies of n-AlxGa1-xAs/CH3CN-Ferrocene+/0 and n-AlxGa1-xAs/KOH-Se-/2-(aq) junctions

Louis G. Casagrande, Bruce J. Tufts, Nathan S Lewis

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12 Citations (Scopus)

Abstract

Trends in open-circuit voltage (Voc), short-circuit current density (Jsc), and energy conversion efficiency have been determined for the n-type AlxGa1-xAs series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH3CN-ferrocene+/0 and KOH-Se-/2-(aq) electrolytes. Voc increased linearly with increases in bandgap energy (Eg) of the n-AlxGa1-xAs alloy electrodes, with ΔVoc/ΔEg = 0.45 ± 0.04 V eV-1 in CH3CN and 0.41 ± 0.09 V eV-1 in KOH-Se-/2-(aq) at a light intensity sufficient to provide Jsc = 1.0 mA cm-2. Jsc values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of ΔVoc/ΔEg implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the AlxGa1-xAs alloy is increased. This is in contrast to the behavior of the n-GaAsxP1-x alloy series in the same electrolytes. The lower value of ΔKoc/ΔEg for n-AlxGa1-xAs also indicates that predictions of the "common anion rule" in solid-state barriers do not apply to this family of III-V semiconductor/liquid junctions.

Original languageEnglish
Pages (from-to)1373-1380
Number of pages8
JournalJournal of Physical Chemistry
Volume95
Issue number3
Publication statusPublished - 1991

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Open circuit voltage
open circuit voltage
Semiconductor materials
trends
Energy conversion
Electrolytes
Conversion efficiency
Liquids
Energy gap
liquids
energy conversion efficiency
Short circuit currents
Anions
energy
electrolytes
Current density
Negative ions
Lighting
short circuit currents
Electrodes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

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title = "Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-AlxGa1-xAs/CH3CN-Ferrocene+/0 and n-AlxGa1-xAs/KOH-Se-/2-(aq) junctions",
abstract = "Trends in open-circuit voltage (Voc), short-circuit current density (Jsc), and energy conversion efficiency have been determined for the n-type AlxGa1-xAs series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH3CN-ferrocene+/0 and KOH-Se-/2-(aq) electrolytes. Voc increased linearly with increases in bandgap energy (Eg) of the n-AlxGa1-xAs alloy electrodes, with ΔVoc/ΔEg = 0.45 ± 0.04 V eV-1 in CH3CN and 0.41 ± 0.09 V eV-1 in KOH-Se-/2-(aq) at a light intensity sufficient to provide Jsc = 1.0 mA cm-2. Jsc values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of ΔVoc/ΔEg implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the AlxGa1-xAs alloy is increased. This is in contrast to the behavior of the n-GaAsxP1-x alloy series in the same electrolytes. The lower value of ΔKoc/ΔEg for n-AlxGa1-xAs also indicates that predictions of the {"}common anion rule{"} in solid-state barriers do not apply to this family of III-V semiconductor/liquid junctions.",
author = "Casagrande, {Louis G.} and Tufts, {Bruce J.} and Lewis, {Nathan S}",
year = "1991",
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T1 - Trends in the open-circuit voltage of semiconductor/liquid interfaces

T2 - Studies of n-AlxGa1-xAs/CH3CN-Ferrocene+/0 and n-AlxGa1-xAs/KOH-Se-/2-(aq) junctions

AU - Casagrande, Louis G.

AU - Tufts, Bruce J.

AU - Lewis, Nathan S

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N2 - Trends in open-circuit voltage (Voc), short-circuit current density (Jsc), and energy conversion efficiency have been determined for the n-type AlxGa1-xAs series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH3CN-ferrocene+/0 and KOH-Se-/2-(aq) electrolytes. Voc increased linearly with increases in bandgap energy (Eg) of the n-AlxGa1-xAs alloy electrodes, with ΔVoc/ΔEg = 0.45 ± 0.04 V eV-1 in CH3CN and 0.41 ± 0.09 V eV-1 in KOH-Se-/2-(aq) at a light intensity sufficient to provide Jsc = 1.0 mA cm-2. Jsc values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of ΔVoc/ΔEg implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the AlxGa1-xAs alloy is increased. This is in contrast to the behavior of the n-GaAsxP1-x alloy series in the same electrolytes. The lower value of ΔKoc/ΔEg for n-AlxGa1-xAs also indicates that predictions of the "common anion rule" in solid-state barriers do not apply to this family of III-V semiconductor/liquid junctions.

AB - Trends in open-circuit voltage (Voc), short-circuit current density (Jsc), and energy conversion efficiency have been determined for the n-type AlxGa1-xAs series of photoelectrodes (x = 0.0, 0.09, 0.16, 0.24, 0.31) in contact with CH3CN-ferrocene+/0 and KOH-Se-/2-(aq) electrolytes. Voc increased linearly with increases in bandgap energy (Eg) of the n-AlxGa1-xAs alloy electrodes, with ΔVoc/ΔEg = 0.45 ± 0.04 V eV-1 in CH3CN and 0.41 ± 0.09 V eV-1 in KOH-Se-/2-(aq) at a light intensity sufficient to provide Jsc = 1.0 mA cm-2. Jsc values under solar-simulated illumination decreased monotonically with increasing bandgap energy. The relatively low value of ΔVoc/ΔEg implies decreases in optimal energy conversion efficiency as the mole fraction of Al in the AlxGa1-xAs alloy is increased. This is in contrast to the behavior of the n-GaAsxP1-x alloy series in the same electrolytes. The lower value of ΔKoc/ΔEg for n-AlxGa1-xAs also indicates that predictions of the "common anion rule" in solid-state barriers do not apply to this family of III-V semiconductor/liquid junctions.

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