Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

Heather N. Arnold, Cory D. Cress, Julian J. McMorrow, Scott W. Schmucker, Vinod K. Sangwan, Laila Jaber-Ansari, Rajan Kumar, Kanan P. Puntambekar, Kyle A. Luck, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

Original languageEnglish
Pages (from-to)5058-5064
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number8
DOIs
Publication statusPublished - Mar 2 2016

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Graphite
Gate dielectrics
Graphene
Electronic equipment
Radiation
Electric potential
Flexible electronics
Ionizing radiation
Field effect transistors
Charge density
Zirconia
Multilayers
Vacuum
Semiconductor materials
Testing

Keywords

  • chemical vapor deposition graphene
  • field-effect transistor
  • hybrid dielectrics
  • low-voltage electronics
  • radiation effects
  • total ionizing dose

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. / Arnold, Heather N.; Cress, Cory D.; McMorrow, Julian J.; Schmucker, Scott W.; Sangwan, Vinod K.; Jaber-Ansari, Laila; Kumar, Rajan; Puntambekar, Kanan P.; Luck, Kyle A.; Marks, Tobin J; Hersam, Mark C.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 8, 02.03.2016, p. 5058-5064.

Research output: Contribution to journalArticle

Arnold, HN, Cress, CD, McMorrow, JJ, Schmucker, SW, Sangwan, VK, Jaber-Ansari, L, Kumar, R, Puntambekar, KP, Luck, KA, Marks, TJ & Hersam, MC 2016, 'Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics', ACS Applied Materials and Interfaces, vol. 8, no. 8, pp. 5058-5064. https://doi.org/10.1021/acsami.5b12259
Arnold, Heather N. ; Cress, Cory D. ; McMorrow, Julian J. ; Schmucker, Scott W. ; Sangwan, Vinod K. ; Jaber-Ansari, Laila ; Kumar, Rajan ; Puntambekar, Kanan P. ; Luck, Kyle A. ; Marks, Tobin J ; Hersam, Mark C. / Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 8. pp. 5058-5064.
@article{e8777f7f42654f68a812987c69b4d00a,
title = "Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics",
abstract = "Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.",
keywords = "chemical vapor deposition graphene, field-effect transistor, hybrid dielectrics, low-voltage electronics, radiation effects, total ionizing dose",
author = "Arnold, {Heather N.} and Cress, {Cory D.} and McMorrow, {Julian J.} and Schmucker, {Scott W.} and Sangwan, {Vinod K.} and Laila Jaber-Ansari and Rajan Kumar and Puntambekar, {Kanan P.} and Luck, {Kyle A.} and Marks, {Tobin J} and Hersam, {Mark C}",
year = "2016",
month = "3",
day = "2",
doi = "10.1021/acsami.5b12259",
language = "English",
volume = "8",
pages = "5058--5064",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "8",

}

TY - JOUR

T1 - Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

AU - Arnold, Heather N.

AU - Cress, Cory D.

AU - McMorrow, Julian J.

AU - Schmucker, Scott W.

AU - Sangwan, Vinod K.

AU - Jaber-Ansari, Laila

AU - Kumar, Rajan

AU - Puntambekar, Kanan P.

AU - Luck, Kyle A.

AU - Marks, Tobin J

AU - Hersam, Mark C

PY - 2016/3/2

Y1 - 2016/3/2

N2 - Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

AB - Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

KW - chemical vapor deposition graphene

KW - field-effect transistor

KW - hybrid dielectrics

KW - low-voltage electronics

KW - radiation effects

KW - total ionizing dose

UR - http://www.scopus.com/inward/record.url?scp=84959477840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959477840&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b12259

DO - 10.1021/acsami.5b12259

M3 - Article

VL - 8

SP - 5058

EP - 5064

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 8

ER -