Tunable Rashba effect in two-dimensional LaOBiS2 films

Ultrathin candidates for spin field effect transistors

Qihang Liu, Yuzheng Guo, Arthur J Freeman

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.

Original languageEnglish
Pages (from-to)5264-5270
Number of pages7
JournalNano Letters
Volume13
Issue number11
DOIs
Publication statusPublished - Nov 13 2013

Fingerprint

Magnetoelectronics
Ultrathin films
Field effect transistors
field effect transistors
Electric fields
Spin polarization
Energy gap
Switches
Fabrication
electric fields
relativistic effects
counters
switches
fabrication
polarization
Direction compound

Keywords

  • biaxial strain
  • density functional theory
  • electric field
  • Rashba effect
  • spin field effect transistor
  • two-dimensional LaOBiS

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Tunable Rashba effect in two-dimensional LaOBiS2 films : Ultrathin candidates for spin field effect transistors. / Liu, Qihang; Guo, Yuzheng; Freeman, Arthur J.

In: Nano Letters, Vol. 13, No. 11, 13.11.2013, p. 5264-5270.

Research output: Contribution to journalArticle

@article{6e3cfd0e0a254b30b552d7b4af7e9ca1,
title = "Tunable Rashba effect in two-dimensional LaOBiS2 films: Ultrathin candidates for spin field effect transistors",
abstract = "Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.",
keywords = "biaxial strain, density functional theory, electric field, Rashba effect, spin field effect transistor, two-dimensional LaOBiS",
author = "Qihang Liu and Yuzheng Guo and Freeman, {Arthur J}",
year = "2013",
month = "11",
day = "13",
doi = "10.1021/nl4027346",
language = "English",
volume = "13",
pages = "5264--5270",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - Tunable Rashba effect in two-dimensional LaOBiS2 films

T2 - Ultrathin candidates for spin field effect transistors

AU - Liu, Qihang

AU - Guo, Yuzheng

AU - Freeman, Arthur J

PY - 2013/11/13

Y1 - 2013/11/13

N2 - Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.

AB - Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.

KW - biaxial strain

KW - density functional theory

KW - electric field

KW - Rashba effect

KW - spin field effect transistor

KW - two-dimensional LaOBiS

UR - http://www.scopus.com/inward/record.url?scp=84887849472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887849472&partnerID=8YFLogxK

U2 - 10.1021/nl4027346

DO - 10.1021/nl4027346

M3 - Article

VL - 13

SP - 5264

EP - 5270

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 11

ER -