Abstract
Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.
| Original language | English |
|---|---|
| Pages (from-to) | 5264-5270 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 13 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 13 2013 |
Fingerprint
Keywords
- biaxial strain
- density functional theory
- electric field
- Rashba effect
- spin field effect transistor
- two-dimensional LaOBiS
ASJC Scopus subject areas
- Condensed Matter Physics
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanical Engineering
Cite this
Tunable Rashba effect in two-dimensional LaOBiS2 films : Ultrathin candidates for spin field effect transistors. / Liu, Qihang; Guo, Yuzheng; Freeman, Arthur J.
In: Nano Letters, Vol. 13, No. 11, 13.11.2013, p. 5264-5270.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Tunable Rashba effect in two-dimensional LaOBiS2 films
T2 - Ultrathin candidates for spin field effect transistors
AU - Liu, Qihang
AU - Guo, Yuzheng
AU - Freeman, Arthur J
PY - 2013/11/13
Y1 - 2013/11/13
N2 - Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.
AB - Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS 2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.
KW - biaxial strain
KW - density functional theory
KW - electric field
KW - Rashba effect
KW - spin field effect transistor
KW - two-dimensional LaOBiS
UR - http://www.scopus.com/inward/record.url?scp=84887849472&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887849472&partnerID=8YFLogxK
U2 - 10.1021/nl4027346
DO - 10.1021/nl4027346
M3 - Article
C2 - 24127876
AN - SCOPUS:84887849472
VL - 13
SP - 5264
EP - 5270
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 11
ER -