Abstract
Functional CISeS QD FETs were demonstrated with fairly high charge carrier mobilities. CISeS QDs were synthesized with 60% Se cations. The absorption onset is characterized by a similar wavelength. To fabricate FETs a heavily doped silicon substrate was used as a bottom gate electrode and a 500 nm layer of SiO2 (dry thermal oxide) provides a low-leakage gate dielectric. Films of CISeS QDs were deposited onto the substrate by spin coating at 2500 rpm. In order to make a consistent QD layer thickness of ?50 nm, 4-5 cycles of spin coating separated by 5 min of annealing of the film at 100°C were repeated. For ligand exchange, a 0.5 mmol solution of the new ligand in methanol was spin coated during each cycle after spin coating QDs. Without any treatments, the as-synthesized QD films are conductive despite the presence of bulky ligands and exhibit p-type transport. The mobility increases after treatment with short EDT molecules that replace the original passivation. Interestingly, the QD treatment with Cd2+ ions changes the nature of charge transport and results in ambipolar behavior for both electrons and holes.
| Original language | English |
|---|---|
| Pages (from-to) | 1701-1705 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 27 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Jan 1 2015 |
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ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Tuning carrier mobilities and polarity of charge transport in films of CulnSexS2-x quantum dots. / Draguta, Sergiu; McDaniel, Hunter; Klimov, Victor I.
In: Advanced Materials, Vol. 27, No. 10, 01.01.2015, p. 1701-1705.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Tuning carrier mobilities and polarity of charge transport in films of CulnSexS2-x quantum dots
AU - Draguta, Sergiu
AU - McDaniel, Hunter
AU - Klimov, Victor I
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Functional CISeS QD FETs were demonstrated with fairly high charge carrier mobilities. CISeS QDs were synthesized with 60% Se cations. The absorption onset is characterized by a similar wavelength. To fabricate FETs a heavily doped silicon substrate was used as a bottom gate electrode and a 500 nm layer of SiO2 (dry thermal oxide) provides a low-leakage gate dielectric. Films of CISeS QDs were deposited onto the substrate by spin coating at 2500 rpm. In order to make a consistent QD layer thickness of ?50 nm, 4-5 cycles of spin coating separated by 5 min of annealing of the film at 100°C were repeated. For ligand exchange, a 0.5 mmol solution of the new ligand in methanol was spin coated during each cycle after spin coating QDs. Without any treatments, the as-synthesized QD films are conductive despite the presence of bulky ligands and exhibit p-type transport. The mobility increases after treatment with short EDT molecules that replace the original passivation. Interestingly, the QD treatment with Cd2+ ions changes the nature of charge transport and results in ambipolar behavior for both electrons and holes.
AB - Functional CISeS QD FETs were demonstrated with fairly high charge carrier mobilities. CISeS QDs were synthesized with 60% Se cations. The absorption onset is characterized by a similar wavelength. To fabricate FETs a heavily doped silicon substrate was used as a bottom gate electrode and a 500 nm layer of SiO2 (dry thermal oxide) provides a low-leakage gate dielectric. Films of CISeS QDs were deposited onto the substrate by spin coating at 2500 rpm. In order to make a consistent QD layer thickness of ?50 nm, 4-5 cycles of spin coating separated by 5 min of annealing of the film at 100°C were repeated. For ligand exchange, a 0.5 mmol solution of the new ligand in methanol was spin coated during each cycle after spin coating QDs. Without any treatments, the as-synthesized QD films are conductive despite the presence of bulky ligands and exhibit p-type transport. The mobility increases after treatment with short EDT molecules that replace the original passivation. Interestingly, the QD treatment with Cd2+ ions changes the nature of charge transport and results in ambipolar behavior for both electrons and holes.
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U2 - 10.1002/adma.201404878
DO - 10.1002/adma.201404878
M3 - Article
AN - SCOPUS:85027958650
VL - 27
SP - 1701
EP - 1705
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 10
ER -