Tunnel magnetoresistance in trilayer junctions from first principles

Cr δ -layer doped GaN/AlN/GaN (0 0 0 1)

X. Y. Cui, B. Delley, Arthur J Freeman, C. Stampfl

Research output: Contribution to journalArticle

Abstract

The microscopic mechanism of the tunneling magnetoresistance (TMR) in Cr-doped GaN/AlN/GaN (0 0 0 1) trilayer junctions is studied based on density functional theory calculations. For enhanced performance, we propose δ -Cr-layer doping in GaN, close to the GaN/AlN interfaces. Depending on the doping concentration, Cr dopants produce local metallic (1 ML) or half-metallic (frac(1, 2) and frac(1, 4) ML) states surrounded by the host semiconductor materials. Very thin AlN barriers are predicted to yield a low TMR effect. These results help explain existing experimental results and are expected to be valuable with regard to the practical fabrication of improved pure semiconductor spintronic devices.

Original languageEnglish
Pages (from-to)395-399
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume322
Issue number4
DOIs
Publication statusPublished - Feb 2010

Fingerprint

Magnetoresistance
Tunnelling magnetoresistance
tunnels
Tunnels
Doping (additives)
semiconductor devices
Semiconductor materials
Magnetoelectronics
density functional theory
fabrication
Density functional theory
Fabrication

Keywords

  • Density functional theory
  • Electronic structure
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Tunnel magnetoresistance in trilayer junctions from first principles : Cr δ -layer doped GaN/AlN/GaN (0 0 0 1). / Cui, X. Y.; Delley, B.; Freeman, Arthur J; Stampfl, C.

In: Journal of Magnetism and Magnetic Materials, Vol. 322, No. 4, 02.2010, p. 395-399.

Research output: Contribution to journalArticle

@article{846d03dddc314039b1681dec21f2b467,
title = "Tunnel magnetoresistance in trilayer junctions from first principles: Cr δ -layer doped GaN/AlN/GaN (0 0 0 1)",
abstract = "The microscopic mechanism of the tunneling magnetoresistance (TMR) in Cr-doped GaN/AlN/GaN (0 0 0 1) trilayer junctions is studied based on density functional theory calculations. For enhanced performance, we propose δ -Cr-layer doping in GaN, close to the GaN/AlN interfaces. Depending on the doping concentration, Cr dopants produce local metallic (1 ML) or half-metallic (frac(1, 2) and frac(1, 4) ML) states surrounded by the host semiconductor materials. Very thin AlN barriers are predicted to yield a low TMR effect. These results help explain existing experimental results and are expected to be valuable with regard to the practical fabrication of improved pure semiconductor spintronic devices.",
keywords = "Density functional theory, Electronic structure, Tunneling magnetoresistance",
author = "Cui, {X. Y.} and B. Delley and Freeman, {Arthur J} and C. Stampfl",
year = "2010",
month = "2",
doi = "10.1016/j.jmmm.2009.09.060",
language = "English",
volume = "322",
pages = "395--399",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Tunnel magnetoresistance in trilayer junctions from first principles

T2 - Cr δ -layer doped GaN/AlN/GaN (0 0 0 1)

AU - Cui, X. Y.

AU - Delley, B.

AU - Freeman, Arthur J

AU - Stampfl, C.

PY - 2010/2

Y1 - 2010/2

N2 - The microscopic mechanism of the tunneling magnetoresistance (TMR) in Cr-doped GaN/AlN/GaN (0 0 0 1) trilayer junctions is studied based on density functional theory calculations. For enhanced performance, we propose δ -Cr-layer doping in GaN, close to the GaN/AlN interfaces. Depending on the doping concentration, Cr dopants produce local metallic (1 ML) or half-metallic (frac(1, 2) and frac(1, 4) ML) states surrounded by the host semiconductor materials. Very thin AlN barriers are predicted to yield a low TMR effect. These results help explain existing experimental results and are expected to be valuable with regard to the practical fabrication of improved pure semiconductor spintronic devices.

AB - The microscopic mechanism of the tunneling magnetoresistance (TMR) in Cr-doped GaN/AlN/GaN (0 0 0 1) trilayer junctions is studied based on density functional theory calculations. For enhanced performance, we propose δ -Cr-layer doping in GaN, close to the GaN/AlN interfaces. Depending on the doping concentration, Cr dopants produce local metallic (1 ML) or half-metallic (frac(1, 2) and frac(1, 4) ML) states surrounded by the host semiconductor materials. Very thin AlN barriers are predicted to yield a low TMR effect. These results help explain existing experimental results and are expected to be valuable with regard to the practical fabrication of improved pure semiconductor spintronic devices.

KW - Density functional theory

KW - Electronic structure

KW - Tunneling magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=70449122206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70449122206&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2009.09.060

DO - 10.1016/j.jmmm.2009.09.060

M3 - Article

VL - 322

SP - 395

EP - 399

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 4

ER -