Tunneled intergrowth structures in the Ga2O3-In2O3-SnO2 system

D. D. Edwards, Thomas O Mason, W. Sinkler, L. D. Marks, Kenneth R Poeppelmeier, Z. Hu, J. D. Jorgensen

Research output: Contribution to journalArticle

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Abstract

The structures of several Ga2O3-In2O3-SnO2 phases were investigated using high-resolution electron microscopy, X-ray diffraction, and Rietveld analysis of time-of-flight neutron diffraction data. The phases, expressed as Ga(4-4x)In(4x)Sn(n-4)O(2n-2) (n = 6 and 7-17, odd), are intergrowths between the β-gallia structure of (Ga, In)2O3 and the rutile structure of SnO2. Samples prepared with n ≥ 9 crystallize in C2/m and are isostructural with intergrowths in the Ga2O3-TiO2 system. Samples prepared with n = 6 and n = 7 are members of an alternative intergrowth series that crystallizes in P2/m. Both intergrowth series are similar in that their members possess 1-D tunnels along the b axis. The difference between the two series is described in terms of different crystallographic shear plane operations (CSP) on the parent rutile structure. (C) 2000 Academic Press.

Original languageEnglish
Pages (from-to)294-304
Number of pages11
JournalJournal of Solid State Chemistry
Volume150
Issue number2
DOIs
Publication statusPublished - 2000

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Rietveld analysis
High resolution electron microscopy
Neutron diffraction
rutile
X ray diffraction analysis
Tunnels
neutron diffraction
tunnels
electron microscopy
shear
high resolution
diffraction
x rays
titanium dioxide

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

Tunneled intergrowth structures in the Ga2O3-In2O3-SnO2 system. / Edwards, D. D.; Mason, Thomas O; Sinkler, W.; Marks, L. D.; Poeppelmeier, Kenneth R; Hu, Z.; Jorgensen, J. D.

In: Journal of Solid State Chemistry, Vol. 150, No. 2, 2000, p. 294-304.

Research output: Contribution to journalArticle

Edwards, D. D. ; Mason, Thomas O ; Sinkler, W. ; Marks, L. D. ; Poeppelmeier, Kenneth R ; Hu, Z. ; Jorgensen, J. D. / Tunneled intergrowth structures in the Ga2O3-In2O3-SnO2 system. In: Journal of Solid State Chemistry. 2000 ; Vol. 150, No. 2. pp. 294-304.
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