Tunneled intergrowth structures in the Ga2O3-In2O3-SnO2 system

D. D. Edwards, T. O. Mason, W. Sinkler, L. D. Marks, K. R. Poeppelmeier, Z. Hu, J. D. Jorgensen

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24 Citations (Scopus)


The structures of several Ga2O3-In2O3-SnO2 phases were investigated using high-resolution electron microscopy, X-ray diffraction, and Rietveld analysis of time-of-flight neutron diffraction data. The phases, expressed as Ga(4-4x)In(4x)Sn(n-4)O(2n-2) (n = 6 and 7-17, odd), are intergrowths between the β-gallia structure of (Ga, In)2O3 and the rutile structure of SnO2. Samples prepared with n ≥ 9 crystallize in C2/m and are isostructural with intergrowths in the Ga2O3-TiO2 system. Samples prepared with n = 6 and n = 7 are members of an alternative intergrowth series that crystallizes in P2/m. Both intergrowth series are similar in that their members possess 1-D tunnels along the b axis. The difference between the two series is described in terms of different crystallographic shear plane operations (CSP) on the parent rutile structure. (C) 2000 Academic Press.

Original languageEnglish
Pages (from-to)294-304
Number of pages11
JournalJournal of Solid State Chemistry
Issue number2
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

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