Abstract
Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {5 over(5, -) 0} planes fitted well to Al2O3{3 over(3, -) 0 0} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 376-381 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 308 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Oct 15 2007 |
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Keywords
- A1. Defects and interfaces
- A1. Orientation relationship
- A1. Transmission electron microscopy
- B1. Transparent conducting oxide thin films
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films. / Zhang, M.; Buchholz, D. B.; Xie, S. J.; Chang, Robert P. H.
In: Journal of Crystal Growth, Vol. 308, No. 2, 15.10.2007, p. 376-381.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films
AU - Zhang, M.
AU - Buchholz, D. B.
AU - Xie, S. J.
AU - Chang, Robert P. H.
PY - 2007/10/15
Y1 - 2007/10/15
N2 - Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {5 over(5, -) 0} planes fitted well to Al2O3{3 over(3, -) 0 0} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.
AB - Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {5 over(5, -) 0} planes fitted well to Al2O3{3 over(3, -) 0 0} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.
KW - A1. Defects and interfaces
KW - A1. Orientation relationship
KW - A1. Transmission electron microscopy
KW - B1. Transparent conducting oxide thin films
UR - http://www.scopus.com/inward/record.url?scp=35348866113&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35348866113&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2007.08.006
DO - 10.1016/j.jcrysgro.2007.08.006
M3 - Article
VL - 308
SP - 376
EP - 381
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2
ER -