Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films

M. Zhang, D. B. Buchholz, S. J. Xie, R. P.H. Chang

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {5 over(5, -) 0} planes fitted well to Al2O3{3 over(3, -) 0 0} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.

Original languageEnglish
Pages (from-to)376-381
Number of pages6
JournalJournal of Crystal Growth
Volume308
Issue number2
DOIs
Publication statusPublished - Oct 15 2007

Keywords

  • A1. Defects and interfaces
  • A1. Orientation relationship
  • A1. Transmission electron microscopy
  • B1. Transparent conducting oxide thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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