Two-band model interpretation of the p - To n -transition in ternary tetradymite topological insulators

T. C. Chasapis, D. Koumoulis, B. Leung, N. P. Calta, S. H. Lo, V. P. Dravid, L. S. Bouchard, Mercouri G Kanatzidis

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Abstract

The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p- to n-transition. The tetradymite Bi2Te3-xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x = 1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two-band model for the different carrier types, indicate that the mixed state originates from different types of native defects that strongly compensate at the crossover point.

Original languageEnglish
Article number083601
JournalAPL Materials
Volume3
Issue number8
DOIs
Publication statusPublished - Aug 1 2015

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Defects
Electrons
Chemical analysis
Electric Conductivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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Two-band model interpretation of the p - To n -transition in ternary tetradymite topological insulators. / Chasapis, T. C.; Koumoulis, D.; Leung, B.; Calta, N. P.; Lo, S. H.; Dravid, V. P.; Bouchard, L. S.; Kanatzidis, Mercouri G.

In: APL Materials, Vol. 3, No. 8, 083601, 01.08.2015.

Research output: Contribution to journalArticle

Chasapis, TC, Koumoulis, D, Leung, B, Calta, NP, Lo, SH, Dravid, VP, Bouchard, LS & Kanatzidis, MG 2015, 'Two-band model interpretation of the p - To n -transition in ternary tetradymite topological insulators', APL Materials, vol. 3, no. 8, 083601. https://doi.org/10.1063/1.4922857
Chasapis, T. C. ; Koumoulis, D. ; Leung, B. ; Calta, N. P. ; Lo, S. H. ; Dravid, V. P. ; Bouchard, L. S. ; Kanatzidis, Mercouri G. / Two-band model interpretation of the p - To n -transition in ternary tetradymite topological insulators. In: APL Materials. 2015 ; Vol. 3, No. 8.
@article{50e8fa11304e41d8b0f44859c7a8213d,
title = "Two-band model interpretation of the p - To n -transition in ternary tetradymite topological insulators",
abstract = "The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p- to n-transition. The tetradymite Bi2Te3-xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x = 1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two-band model for the different carrier types, indicate that the mixed state originates from different types of native defects that strongly compensate at the crossover point.",
author = "Chasapis, {T. C.} and D. Koumoulis and B. Leung and Calta, {N. P.} and Lo, {S. H.} and Dravid, {V. P.} and Bouchard, {L. S.} and Kanatzidis, {Mercouri G}",
year = "2015",
month = "8",
day = "1",
doi = "10.1063/1.4922857",
language = "English",
volume = "3",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Two-band model interpretation of the p - To n -transition in ternary tetradymite topological insulators

AU - Chasapis, T. C.

AU - Koumoulis, D.

AU - Leung, B.

AU - Calta, N. P.

AU - Lo, S. H.

AU - Dravid, V. P.

AU - Bouchard, L. S.

AU - Kanatzidis, Mercouri G

PY - 2015/8/1

Y1 - 2015/8/1

N2 - The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p- to n-transition. The tetradymite Bi2Te3-xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x = 1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two-band model for the different carrier types, indicate that the mixed state originates from different types of native defects that strongly compensate at the crossover point.

AB - The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p- to n-transition. The tetradymite Bi2Te3-xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x = 1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two-band model for the different carrier types, indicate that the mixed state originates from different types of native defects that strongly compensate at the crossover point.

UR - http://www.scopus.com/inward/record.url?scp=84933055139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84933055139&partnerID=8YFLogxK

U2 - 10.1063/1.4922857

DO - 10.1063/1.4922857

M3 - Article

VL - 3

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 8

M1 - 083601

ER -