Abstract
Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.
| Original language | English |
|---|---|
| Article number | 081902 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Two-dimensional current percolation in nanocrystalline vanadiumdioxide films. / Rozen, John; Lopez, Reń; Haglund, Richard F.; Feldman, Leonard C.
In: Applied Physics Letters, Vol. 88, No. 8, 081902, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Two-dimensional current percolation in nanocrystalline vanadiumdioxide films
AU - Rozen, John
AU - Lopez, Reń
AU - Haglund, Richard F.
AU - Feldman, Leonard C
PY - 2006
Y1 - 2006
N2 - Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.
AB - Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.
UR - http://www.scopus.com/inward/record.url?scp=33644545078&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33644545078&partnerID=8YFLogxK
U2 - 10.1063/1.2175490
DO - 10.1063/1.2175490
M3 - Article
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 081902
ER -