Two-dimensional current percolation in nanocrystalline vanadiumdioxide films

John Rozen; Reń Lopez; Richard F. Haglund; Leonard C. Feldman

doi:10.1063/1.2175490

Two-dimensional current percolation in nanocrystalline vanadiumdioxide films

John Rozen, Reń Lopez, Richard F. Haglund, Leonard C. Feldman

Rutgers University

Research output: Contribution to journal › Article

82 Citations (Scopus)

Abstract

Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.

Original language	English
Article number	081902
Journal	Applied Physics Letters
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.2175490
Publication status	Published - Mar 3 2006

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Rozen, J., Lopez, R., Haglund, R. F., & Feldman, L. C. (2006). Two-dimensional current percolation in nanocrystalline vanadiumdioxide films. Applied Physics Letters, 88(8), [081902]. https://doi.org/10.1063/1.2175490

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Access to Document

10.1063/1.2175490