Two-dimensional current percolation in nanocrystalline vanadiumdioxide films

John Rozen, Reń Lopez, Richard F. Haglund, Leonard C Feldman

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.

Original languageEnglish
Article number081902
JournalApplied Physics Letters
Volume88
Issue number8
DOIs
Publication statusPublished - 2006

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transition metals
optical switching
transmittance
wire
temperature
shift
approximation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Two-dimensional current percolation in nanocrystalline vanadiumdioxide films. / Rozen, John; Lopez, Reń; Haglund, Richard F.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 88, No. 8, 081902, 2006.

Research output: Contribution to journalArticle

Rozen, John ; Lopez, Reń ; Haglund, Richard F. ; Feldman, Leonard C. / Two-dimensional current percolation in nanocrystalline vanadiumdioxide films. In: Applied Physics Letters. 2006 ; Vol. 88, No. 8.
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