Abstract
Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.
Original language | English |
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Article number | 081902 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)