Abstract
A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.
| Original language | English |
|---|---|
| Pages (from-to) | 4229-4235 |
| Number of pages | 7 |
| Journal | Journal of Chemical Physics |
| Volume | 101 |
| Issue number | 5 |
| Publication status | Published - 1994 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Two-dimensional model of geometric effects in thin film crystal orientation. / Birnie, Dunbar P; Weinberg, Michael C.
In: Journal of Chemical Physics, Vol. 101, No. 5, 1994, p. 4229-4235.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Two-dimensional model of geometric effects in thin film crystal orientation
AU - Birnie, Dunbar P
AU - Weinberg, Michael C.
PY - 1994
Y1 - 1994
N2 - A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.
AB - A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.
UR - http://www.scopus.com/inward/record.url?scp=0041966478&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0041966478&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0041966478
VL - 101
SP - 4229
EP - 4235
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
SN - 0021-9606
IS - 5
ER -