Abstract
A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.
Original language | English |
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Pages (from-to) | 4229-4235 |
Number of pages | 7 |
Journal | Journal of Chemical Physics |
Volume | 101 |
Issue number | 5 |
Publication status | Published - 1994 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics