### Abstract

A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.

Original language | English |
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Pages (from-to) | 4229-4235 |

Number of pages | 7 |

Journal | Journal of Chemical Physics |

Volume | 101 |

Issue number | 5 |

Publication status | Published - 1994 |

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### ASJC Scopus subject areas

- Atomic and Molecular Physics, and Optics

### Cite this

*Journal of Chemical Physics*,

*101*(5), 4229-4235.

**Two-dimensional model of geometric effects in thin film crystal orientation.** / Birnie, Dunbar P; Weinberg, Michael C.

Research output: Contribution to journal › Article

*Journal of Chemical Physics*, vol. 101, no. 5, pp. 4229-4235.

}

TY - JOUR

T1 - Two-dimensional model of geometric effects in thin film crystal orientation

AU - Birnie, Dunbar P

AU - Weinberg, Michael C.

PY - 1994

Y1 - 1994

N2 - A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.

AB - A simple two-dimensional model is employed to derive the fraction of oriented crystalline area in thin film crystallization processes, and to assess the influence of various physical parameters upon the extent of orientation. The final expressions, which are given as averages over probability distributions, are shown to be precise via comparisons with numerical calculations. We find that for a given film thickness the seed (nucleus) density and nucleus orientation probability distribution have a dramatic influence upon the extent of orientation, while the crystal growth rate anisotropy has a smaller effect.

UR - http://www.scopus.com/inward/record.url?scp=0041966478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041966478&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0041966478

VL - 101

SP - 4229

EP - 4235

JO - Journal of Chemical Physics

JF - Journal of Chemical Physics

SN - 0021-9606

IS - 5

ER -