Two-dimensional semiconductors for transistors

Manish Chhowalla, Debdeep Jena, Hua Zhang

Research output: Contribution to journalReview article

179 Citations (Scopus)

Abstract

In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as short-channel effects. In FETs with channels made from 2D semiconductors, leakage current is almost eliminated because all electrons are confined in atomically thin channels and, hence, are uniformly influenced by the gate voltage. In this Review, we provide a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FETs in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene. We also describe tunnelling FETs that possess extremely low-power switching behaviour and explain how they can be realized using heterostructures of 2D semiconductors.

Original languageEnglish
Article number16052
JournalNature Reviews Materials
Volume1
Issue number11
DOIs
Publication statusPublished - Aug 17 2016

Fingerprint

Field effect transistors
Transistors
Semiconductor materials
Graphite
Leakage currents
Graphene
Transition metals
Heterojunctions
Electrodes
Electrons
Electric potential

ASJC Scopus subject areas

  • Energy (miscellaneous)
  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films

Cite this

Two-dimensional semiconductors for transistors. / Chhowalla, Manish; Jena, Debdeep; Zhang, Hua.

In: Nature Reviews Materials, Vol. 1, No. 11, 16052, 17.08.2016.

Research output: Contribution to journalReview article

Chhowalla, Manish ; Jena, Debdeep ; Zhang, Hua. / Two-dimensional semiconductors for transistors. In: Nature Reviews Materials. 2016 ; Vol. 1, No. 11.
@article{193c0dced30c4ca0bc452a3268e64c7b,
title = "Two-dimensional semiconductors for transistors",
abstract = "In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as short-channel effects. In FETs with channels made from 2D semiconductors, leakage current is almost eliminated because all electrons are confined in atomically thin channels and, hence, are uniformly influenced by the gate voltage. In this Review, we provide a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FETs in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene. We also describe tunnelling FETs that possess extremely low-power switching behaviour and explain how they can be realized using heterostructures of 2D semiconductors.",
author = "Manish Chhowalla and Debdeep Jena and Hua Zhang",
year = "2016",
month = "8",
day = "17",
doi = "10.1038/natrevmats.2016.52",
language = "English",
volume = "1",
journal = "Nature Reviews Materials",
issn = "2058-8437",
publisher = "Nature Publishing Group",
number = "11",

}

TY - JOUR

T1 - Two-dimensional semiconductors for transistors

AU - Chhowalla, Manish

AU - Jena, Debdeep

AU - Zhang, Hua

PY - 2016/8/17

Y1 - 2016/8/17

N2 - In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as short-channel effects. In FETs with channels made from 2D semiconductors, leakage current is almost eliminated because all electrons are confined in atomically thin channels and, hence, are uniformly influenced by the gate voltage. In this Review, we provide a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FETs in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene. We also describe tunnelling FETs that possess extremely low-power switching behaviour and explain how they can be realized using heterostructures of 2D semiconductors.

AB - In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred to as short-channel effects. In FETs with channels made from 2D semiconductors, leakage current is almost eliminated because all electrons are confined in atomically thin channels and, hence, are uniformly influenced by the gate voltage. In this Review, we provide a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FETs in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene. We also describe tunnelling FETs that possess extremely low-power switching behaviour and explain how they can be realized using heterostructures of 2D semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85013071147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013071147&partnerID=8YFLogxK

U2 - 10.1038/natrevmats.2016.52

DO - 10.1038/natrevmats.2016.52

M3 - Review article

VL - 1

JO - Nature Reviews Materials

JF - Nature Reviews Materials

SN - 2058-8437

IS - 11

M1 - 16052

ER -