Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Xinge Yu, Li Zeng, Nanjia Zhou, Peijun Guo, Fengyuan Shi, Donald B. Buchholz, Q. Ma, Junsheng Yu, Vinayak P. Dravid, Robert P. H. Chang, Michael Bedzyk, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V-1 s-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

Original languageEnglish
Pages (from-to)2390-2399
Number of pages10
JournalAdvanced Materials
Volume27
Issue number14
DOIs
Publication statusPublished - Apr 8 2015

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Keywords

  • flexible materials
  • indium oxide
  • polymer blends
  • thin-film transistors
  • transparent electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yu, X., Zeng, L., Zhou, N., Guo, P., Shi, F., Buchholz, D. B., ... Facchetti, A. (2015). Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends. Advanced Materials, 27(14), 2390-2399. https://doi.org/10.1002/adma.201405400