An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both InP and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show improved interfacial properties with little or no hysteresis.
|Number of pages||7|
|Journal||Journal of Materials Research|
|Publication status||Published - Sep 1988|
ASJC Scopus subject areas
- Materials Science(all)