Ultra high vacuum system for thin dielectric film deposition at low temperatures

R. P H Chang, G. Griffiths

Research output: Contribution to journalArticle


An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both InP and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show improved interfacial properties with little or no hysteresis.

Original languageEnglish
Pages (from-to)951-957
Number of pages7
JournalJournal of Materials Research
Issue number5
Publication statusPublished - Sep 1988


ASJC Scopus subject areas

  • Materials Science(all)

Cite this