Ultra high vacuum system for thin dielectric film deposition at low temperatures

R. P H Chang, G. Griffiths

Research output: Contribution to journalArticle

Abstract

An ultra high vacuum system has been designed and constructed for the purpose of depositing high-quality oxide films on well-characterized crystal surfaces at low temperatures. In particular, aluminum phosphorus oxide films have been deposited on both InP and Ge surfaces for the purpose of device application. Electrical measurements of metal-oxide-semiconductor structures show improved interfacial properties with little or no hysteresis.

Original languageEnglish
Pages (from-to)951-957
Number of pages7
JournalJournal of Materials Research
Volume3
Issue number5
Publication statusPublished - Sep 1988

Fingerprint

Dielectric films
vacuum systems
Ultrahigh vacuum
ultrahigh vacuum
Oxide films
oxide films
phosphorus oxides
Thin films
Aluminum
crystal surfaces
metal oxide semiconductors
Phosphorus
electrical measurement
Hysteresis
aluminum oxides
Metals
hysteresis
Temperature
Crystals
Oxide semiconductors

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ultra high vacuum system for thin dielectric film deposition at low temperatures. / Chang, R. P H; Griffiths, G.

In: Journal of Materials Research, Vol. 3, No. 5, 09.1988, p. 951-957.

Research output: Contribution to journalArticle

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