Abstract
We show how phase separation, in the form of a redistribution of impurities (dopants in a semiconductor), can occur at impurity concentrations that are more than one order of magnitude lower than hitherto observed. This phenomenon results from the balance between long-range electrostatic repulsion and the elastic attraction of the dopants, which deforms the anisotropic host lattice. We observed such a phase separation for Ag in (Cd, Hg)Te at Ag concentrations < 0.02 at. %. This also leads to the formation of a thermodynamically (as opposed to kinetically) stable p-n junction in the 2-phase region. Searching for phase separation at such low concentrations requires highly sensitive analyses, here made possible because of the difference in conductivity type between the phases.
Original language | English |
---|---|
Pages (from-to) | 201-207 |
Number of pages | 7 |
Journal | Europhysics Letters |
Volume | 45 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 15 1999 |
ASJC Scopus subject areas
- Physics and Astronomy(all)