Abstract
We show how phase separation, in the form of a redistribution of impurities (dopants in a semiconductor), can occur at impurity concentrations that are more than one order of magnitude lower than hitherto observed. This phenomenon results from the balance between long-range electrostatic repulsion and the elastic attraction of the dopants, which deforms the anisotropic host lattice. We observed such a phase separation for Ag in (Cd, Hg)Te at Ag concentrations <0.02 at. %. This also leads to the formation of a thermodynamically (as opposed to kinetically) stable p-n junction in the 2-phase region. Searching for phase separation at such low concentrations requires highly sensitive analyses, here made possible because of the difference in conductivity type between the phases.
| Original language | English |
|---|---|
| Pages (from-to) | 201-207 |
| Number of pages | 7 |
| Journal | Europhysics Letters |
| Volume | 45 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 15 1999 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Ultra-low concentration phase separation in solids : Ag in (Cd, Hg)Te. / Lubomirsky, Igor; Gurovich, E.; Safran, S. A.; Cahen, D.
In: Europhysics Letters, Vol. 45, No. 2, 15.01.1999, p. 201-207.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-low concentration phase separation in solids
T2 - Ag in (Cd, Hg)Te
AU - Lubomirsky, Igor
AU - Gurovich, E.
AU - Safran, S. A.
AU - Cahen, D.
PY - 1999/1/15
Y1 - 1999/1/15
N2 - We show how phase separation, in the form of a redistribution of impurities (dopants in a semiconductor), can occur at impurity concentrations that are more than one order of magnitude lower than hitherto observed. This phenomenon results from the balance between long-range electrostatic repulsion and the elastic attraction of the dopants, which deforms the anisotropic host lattice. We observed such a phase separation for Ag in (Cd, Hg)Te at Ag concentrations <0.02 at. %. This also leads to the formation of a thermodynamically (as opposed to kinetically) stable p-n junction in the 2-phase region. Searching for phase separation at such low concentrations requires highly sensitive analyses, here made possible because of the difference in conductivity type between the phases.
AB - We show how phase separation, in the form of a redistribution of impurities (dopants in a semiconductor), can occur at impurity concentrations that are more than one order of magnitude lower than hitherto observed. This phenomenon results from the balance between long-range electrostatic repulsion and the elastic attraction of the dopants, which deforms the anisotropic host lattice. We observed such a phase separation for Ag in (Cd, Hg)Te at Ag concentrations <0.02 at. %. This also leads to the formation of a thermodynamically (as opposed to kinetically) stable p-n junction in the 2-phase region. Searching for phase separation at such low concentrations requires highly sensitive analyses, here made possible because of the difference in conductivity type between the phases.
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U2 - 10.1209/epl/i1999-00147-6
DO - 10.1209/epl/i1999-00147-6
M3 - Article
VL - 45
SP - 201
EP - 207
JO - Europhysics Letters
JF - Europhysics Letters
SN - 0295-5075
IS - 2
ER -