Abstract
The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.
| Original language | English |
|---|---|
| Pages (from-to) | 1463-1467 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 3 |
| Publication status | Published - 1996 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Klimov, V. I., Haring Bolivar, P., & Kurz, H. (1996). Ultrafast carrier dynamics in semiconductor quantum dots. Physical Review B - Condensed Matter and Materials Physics, 53(3), 1463-1467.