Ultrafast carrier dynamics in semiconductor quantum dots

Victor I Klimov, P. Haring Bolivar, H. Kurz

Research output: Contribution to journalArticle

145 Citations (Scopus)

Abstract

The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.

Original languageEnglish
Pages (from-to)1463-1467
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number3
Publication statusPublished - 1996

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Band structure
Nanocrystals
energy bands
nanocrystals
occupation
Energy gap
trapping
Glass
glass
decay
matrices

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ultrafast carrier dynamics in semiconductor quantum dots. / Klimov, Victor I; Haring Bolivar, P.; Kurz, H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 3, 1996, p. 1463-1467.

Research output: Contribution to journalArticle

@article{011ab80a7a4e469db7a96759258dcd1f,
title = "Ultrafast carrier dynamics in semiconductor quantum dots",
abstract = "The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.",
author = "Klimov, {Victor I} and {Haring Bolivar}, P. and H. Kurz",
year = "1996",
language = "English",
volume = "53",
pages = "1463--1467",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "3",

}

TY - JOUR

T1 - Ultrafast carrier dynamics in semiconductor quantum dots

AU - Klimov, Victor I

AU - Haring Bolivar, P.

AU - Kurz, H.

PY - 1996

Y1 - 1996

N2 - The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.

AB - The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.

UR - http://www.scopus.com/inward/record.url?scp=0000559826&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000559826&partnerID=8YFLogxK

M3 - Article

VL - 53

SP - 1463

EP - 1467

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 3

ER -