Ultrafast carrier dynamics in semiconductor quantum dots

V. Klimov; P. Haring Bolivar; H. Kurz

doi:10.1103/PhysRevB.53.1463

Ultrafast carrier dynamics in semiconductor quantum dots

V. Klimov, P. Haring Bolivar, H. Kurz

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

152 Citations (Scopus)

Abstract

The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC’s) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.

Original language	English
Pages (from-to)	1463-1467
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	53
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.53.1463
Publication status	Published - 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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AB - The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC’s) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400-700 fs) which is explained by the preexisting occupation of the localized states.

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Ultrafast carrier dynamics in semiconductor quantum dots

Abstract

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